DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTA14
NPN Darlington transistor
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 14
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
PINNING
PIN
1
2, 4
3
base/input
collector/output
emitter/ground
PZTA14
DESCRIPTION
handbook, halfpage
4
1
2, 4
TR1
TR2
3
1
Top view
2
3
MAM319
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
V
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
30
30
10
500
800
200
1.25
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN Darlington transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
100
19
PZTA14
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
h
FE
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
V
BE
= 0; V
CE
= 30 V
I
C
= 0; V
EB
= 10 V
V
CE
= 5 V; (see Fig.2)
I
C
= 10 mA
I
C
= 100 mA
V
CEsat
V
BEon
f
T
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA
base-emitter on-state voltage
transition frequency
I
C
= 100 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
10000
20000
−
−
125
−
−
1.5
2
−
V
V
MHz
−
−
−
MIN.
MAX.
100
100
100
UNIT
nA
nA
nA
1999 Apr 14
3
Philips Semiconductors
Product specification
NPN Darlington transistor
PZTA14
handbook, full pagewidth
80000
hFE
MGD837
60000
40000
20000
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 2 V.
Fig.2 DC current gain; typical values.
1999 Apr 14
4
Philips Semiconductors
Product specification
NPN Darlington transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
PZTA14
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 14
5
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