KM23C8100B-10 datasheet, PDF - EEWORLD Datasheet

KM23C8100B-10: DescriptionMASK ROM, 1MX8, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42; Categorystorage storage; File Size55KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM23C8100B-10 Overview

MASK ROM, 1MX8, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIP
package instruction	DIP, DIP42,.6
Contacts	42
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	100 ns
Spare memory width	16
JESD-30 code	R-PDIP-T42
JESD-609 code	e0
length	52.43 mm
memory density	8388608 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	42
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP42,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum standby current	0.00005 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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