V58C2256(804/404/164)S
HIGH PERFORMANCE
2.5 VOLT 256 Mbit DDR SDRAM
4 BANKS X 8Mbit X 8 (804)
4 BANKS X 4Mbit X 16 (164)
4 BANKS X 16Mbit X 4 (404)
6
DDR333B
7
DDR266A
7.5ns
7ns
143 MHz
75
DDR266B
10 ns
7.5 ns
133 MHz
PRELIMINARY
Features
■
High speed data transfer rates with system
frequency up to 166 MHz
■
Data Mask for Write Control
■
Four Banks controlled by BA0 & BA1
■
Programmable CAS Latency: 2, 2.5
■
Programmable Wrap Sequence: Sequential
or Interleave
■
Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
■
Automatic and Controlled Precharge Command
■
Power Down Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 8192 cycles/64 ms
■
Available in 66-pin 400 mil TSOP or 60 Ball SOC
BGA
■
SSTL-2 Compatible I/Os
■
Double Data Rate (DDR)
■
Bidirectional Data Strobe (DQS) for input and
output data, active on both edges
■
On-Chip DLL aligns DQ and DQs transitions with
CK transitions
■
Differential clock inputs CK and CK
■
Power Supply 2.5V ± 0.2V
■
QFC options for FET control. x4 parts.
*Note: DDR 333B Supports PC2700 module with 2.5-3-3 timing
DDR 266A Supports PC2100 module with 2-2-2 timing
DDR 266B Supports PC2100 module with 2.5-3-3 timing
DDR 200 Supports PC1600 module with 2-2-2 timing
CILETIV LESO M
8
DDR200
10 ns
8 ns
125 MHz
Clock Cycle Time (t
CK2
)
Clock Cycle Time (t
CK2.5
)
System Frequency (f
CK max
)
7.5 ns
6 ns
166 MHz
Description
The V58C2256(804/404/164)S is a four bank
DDR DRAM organized as 4 banks x 8Mbit x 8 (804),
4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4
(404). The V58C2256(804/404/164)S achieves high
speed data transfer rates by employing a chip archi-
tecture that prefetches multiple bits and then syn-
chronizes the output data to a system clock.
All of the control, address, circuits are synchro-
nized with the positive edge of an externally sup-
plied clock. I/O transactions are ocurring on both
edges of DQS.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at a higher rate than is possible with standard
DRAMs. A sequential and gapless data rate is pos-
sible depending on burst length, CAS latency and
speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
JEDEC 66 TSOP II
60 SOC BGA
•
CK Cycle Time (ns)
-6
•
Power
-8
•
-7
•
-75
•
Std.
•
L
•
Temperature
Mark
Blank
V58C2256(804/404/164)S Rev.1.4 October 2002
1
V58C2256(804/404/164)S
Column decoder
Sense amplifier & I(O) bus
Column decoder
Sense amplifier & I(O) bus
Column decoder
Sense amplifier & I(O) bus
Bank 0
Bank 1
Bank 2
Column decoder
Sense amplifier & I(O) bus
CKE
CK, CK
DLL
Strobe
Gen.
Data Strobe
DQS
V58C2256(804/404/164)S Rev. 1.4 October 2002
4
QFC
CAS
RAS
WE
DM
CK
CK
CS
CILETIV LESO M
V
MOSEL VITELIC
MANUFACTURED
58
C
2 256(80/40/16) 4
S
X T XX
DDR SDRAM
CMOS
2.5V
256Mb, 8K Refresh
x8, x4, x16
4 Banks
SSTL
SPEED
6 (133MHz@CL2.5))
7 (143MHz@CL2.5))
75(133MHz@CL2.5)
8 (125MHz@CL2.5)
COMPONENT
PACKAGE, T = TSOP S=SOC BGA
COMPONENT
REV LEVEL A=0.14u
Block Diagram
Column Addresses
64M x 4
Row Addresses
A0 - A12, BA0, BA1
A0 - A9, A11, AP, BA0, BA1
Column address
counter
Column address
buffer
Row address
buffer
Refresh Counter
Row decoder
Memory array
Row decoder
Memory array
Row decoder
Memory array
Row decoder
Memory array
Bank 3
8192 x 1024
x8
8192 x 1024
x8
8192 x 1024
x8
8192 x 1024
x8
Input buffer
Output buffer
Control logic & timing generator
DQ
0
-DQ
3
Microcontroller MCU
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