Power Field-Effect Transistor, 1.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Supertex |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW THRESHOLD |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V |
| Maximum drain current (Abs) (ID) | 1.5 A |
| Maximum drain current (ID) | 1.5 A |
| Maximum drain-source on-resistance | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 35 pF |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 45 W |
| Maximum power dissipation(Abs) | 45 W |
| Maximum pulsed drain current (IDM) | 2.5 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 40 ns |
| Maximum opening time (tons) | 18 ns |
| TN0624N5 | TN0620ND | TN0620N2 | TN0624ND | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 1.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Small Signal Field-Effect Transistor, 0.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | UNCASED CHIP, S-XUUC-N3 | CYLINDRICAL, O-MBCY-W3 | UNCASED CHIP, S-XUUC-N3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 240 V | 200 V | 200 V | 240 V |
| Maximum drain-source on-resistance | 6 Ω | 6 Ω | 6 Ω | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 35 pF | 35 pF | 35 pF | 35 pF |
| JESD-30 code | R-PSFM-T3 | S-XUUC-N3 | O-MBCY-W3 | S-XUUC-N3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | UNSPECIFIED | METAL | UNSPECIFIED |
| Package shape | RECTANGULAR | SQUARE | ROUND | SQUARE |
| Package form | FLANGE MOUNT | UNCASED CHIP | CYLINDRICAL | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | YES | NO | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD |
| Terminal form | THROUGH-HOLE | NO LEAD | WIRE | NO LEAD |
| Terminal location | SINGLE | UPPER | BOTTOM | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maker | Supertex | - | Supertex | Supertex |
| Parts packaging code | SFM | DIE | - | DIE |
| Contacts | 3 | 3 | - | 3 |