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MGBR10L60CL-TN3-T

Description
DUAL MOS GATED BARRIER RECTIFIER
CategoryDiscrete semiconductor    diode   
File Size153KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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MGBR10L60CL-TN3-T Overview

DUAL MOS GATED BARRIER RECTIFIER

MGBR10L60CL-TN3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionLEAD FREE PACKAGE-3/2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.63 V
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current120 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage60 V
Maximum reverse current300 µA
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L60C
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
DIODE
The UTC
MGBR10L60C
is a dual mos gated barrier rectifiers, it
uses UTC’s advanced technology to provide customers with low
forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
A
K
A
A
K
A
A
K
A
A
K
A
Packing
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR10L60CL-TA3-T
MGBR10L60CG-TA3-T
MGBR10L60CL-TF3-T
MGBR10L60CG-TF3-T
MGBR10L60CL-TN3-T
MGBR10L60CG-TN3-T
MGBR10L60CL-TN3-R
MGBR10L60CG-TN3-R
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-252
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-137.C

MGBR10L60CL-TN3-T Related Products

MGBR10L60CL-TN3-T MGBR10L60C MGBR10L60CG-TN3-T
Description DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER
Is it Rohs certified? conform to - conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD
package instruction LEAD FREE PACKAGE-3/2 - HALOGEN FREE PACKAGE-3/2
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
application GENERAL PURPOSE - GENERAL PURPOSE
Configuration COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 0.63 V - 0.63 V
JEDEC-95 code TO-252 - TO-252
JESD-30 code R-PSSO-G2 - R-PSSO-G2
Maximum non-repetitive peak forward current 120 A - 120 A
Number of components 2 - 2
Phase 1 - 1
Number of terminals 2 - 2
Maximum operating temperature 150 °C - 150 °C
Minimum operating temperature -65 °C - -65 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum repetitive peak reverse voltage 60 V - 60 V
Maximum reverse current 300 µA - 300 µA
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
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