Ordering number : ENA1066E
LE25FU406B
Overview
CMOS IC
4M-bit (512K×8) Serial Flash Memory
The LE25FU406B is a serial interface-compatible flash memory device with a 512K
×
8-bit configuration. It uses a
single 2.5V power supply for both reading and writing (program and erase functions) and does not require a special
power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to
the size of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the
sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can
be efficiently utilized by selecting one of these functions depending on the application. A page program method is
supported for data writing. The page program method of the LE25FU406B can program any amount of data from 1 to
256 bytes. The program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data
writing. While making the most of the features inherent to a serial flash memory device, the LE25FU406B is housed in
an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed,
but the LE25FU406B has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up
to 30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in
applications such as portable information devices and small disk systems, which are required to have increasingly more
compact dimensions.
Features
•
Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range
•
Operating frequency
: 30MHz
50MHz (at the planning stage)
•
Temperature range
: 0 to 70°C
–40 to +85°C (at the planning stage)
•
Serial interface
: SPI mode 0, mode 3 supported
•
Sector size
: 4K bytes/small sector, 64K bytes/sector
•
Data retention period
: 20 years
Continued on next page.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
10511 SY/63010 SY 20100621-S00013/20310 SY 20100128-S00002 / D1609 SY / 70908 SY IM / 41608 SY IM No.A1066-1/21
LE25FU406B
Continued from preceding page.
•
Small sector erase, sector erase, chip erase functions
•
Page program function (256 bytes/page)
•
Block protect function
•
Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ.), 150ms (max.)
Sector erase time
: 80ms (typ.), 250ms (max.)
Chip erase time
: 200ms (typ.), 2.0s (max.)
Page program time
: 2.0ms/256 bytes (typ.), 2.5ms/256 bytes (max.)
•
Status functions
Ready/busy information, protect information
•
Package
: LE25FU406BTT MSOP8 (225mil)
: LE25FU406BMA MFP8 (225mil)
: LE25FU406BLF VSON8N (6.0mm
×
5.0mm)
: LE25FU406BMB SOP8K (200mil)
Package Dimensions
unit:mm (typ)
3276
5.2
Package Dimensions
unit:mm (typ)
3032E
5.0
[LE25FU406BTT]
[LE25FU406BMA]
8
5
8
4.4
6.3
0.5
4.4
6.4
1
(0.7)
1.27
4
0.35
0.85max
1
0.125
2
1.27
0.35
0.15
(0.6)
(0.65)
0.08
SANYO : MSOP8(225mil)
SANYO : MFP8(225mil)
Package Dimensions
unit:mm (typ)
3391
TOP VIEW
5.0
8
Exposed Die-Pad
Do Not Connect
SIDE VIEW
Package Dimensions
[LE25FU406BLF]
BOTTOM VIEW
unit:mm (typ)
3398
4.9
8
0.1
(1.5)
1.7 MAX
[LE25FU406BMB]
6.0
(3.4)
3.9
6.0
(4.0)
0.63
0.6
1
1
2
1.27
SIDE VIEW
0.4
2
1
(0.595)
2
1.27
0.2
0.0 NOM
SANYO : VSON8N(6.0x5.0)
SANYO : SOP8K(200mil)
0.15
(1.5)
1.75 MAX
(0.55)
0.85 MAX
0.4
(0.8)
0.7
No.A1066-2/21
LE25FU406B
Figure 1 Pin Assignments
CS
SO
WP
VSS
1
2
3
4
Top view
8
7
6
5
VDD
HOLD
SCK
SI
CS 1
SO 2
WP 3
VSS 4
Top view
VSON8 (LE25FU406BLF)
8 VDD
7 HOLD
6 SCK
5 SI
MSOP8 (LE25FU406BTT)
MFP8 (LE25FU406BMA)
SOP8K (LE25FU406BMB)
Figure 2 Block Diagram
ADDRESS
BUFFERS
&
LATCHES
X-
DECODER
4M Bit
Flash EEPROM
Cell Array
Y-DECODER
CONTROL
LOGIC
I/O BUFFERS
&
DATA LATCHES
SERIAL INTERFACE
CS
SCK
SI
SO
WP
HOLD
Table 1 Pin Description
Symbol
SCK
Pin Name
Serial clock
This pin controls the data input/output timing.
The input data and addresses are latched synchronized to the rising edge of the serial clock, and the data is
output synchronized to the falling edge of the serial clock.
SI
SO
CS
WP
HOLD
VDD
VSS
Serial data input
Serial data output
Chip select
Write protect
Hold
Power supply
Ground
The data and addresses are input from this pin, and latched internally synchronized to the rising edge of the
serial clock.
The data stored inside the device is output from this pin synchronized to the falling edge of the serial clock.
The device becomes active when the logic level of this pin is low; it is deselected and placed in standby
status when the logic level of the pin is high.
The status register write protect (SRWP) takes effect when the logic level of this pin is low.
Serial communication is suspended when the logic level of this pin is low.
This pin supplies the 2.30 to 3.60V supply voltage.
This pin supplies the 0V supply voltage.
Description
No.A1066-3/21
LE25FU406B
Table 2 Command Settings
Command
Read
1st bus cycle
03h
0Bh
Small sector erase
Sector erase
Chip erase
Page program
Write enable
Write disable
Power down
Status register read
Status register write
Read silicon ID 1 *2
Read silicon ID 2 *3
Exit power down mode
D7h
D8h
C7h
02h
06h
04h
B9h
05h
01h
9Fh
ABh
ABh
X
X
A7-A0
DATA
A23-A16
A15-A8
A7-A0
PD *1
PD *1
PD *1
2nd bus cycle
A23-A16
A23-A16
A23-A16
A23-A16
3rd bus cycle
A15-A8
A15-A8
A15-A8
A15-A8
4th bus cycle
A7-A0
A7-A0
A7-A0
A7-A0
X
5th bus cycle
6th bus cycle
Nth bus cycle
Explanatory notes for Table 2
"X" signifies "don't care" (that is to say, any value may be input).
The "h" following each code indicates that the number given is in hexadecimal notation.
Addresses A23 to A19 for all commands are "Don't care".
In order for commands other than the read command to be recognized, CS must rise after all the bus cycle input.
*1: "PD" stands for page program data. Any amount of data from 1 to 256 bytes in 1-byte unit is input.
*2: Of the two silicon ID commands, it is for the command with the 9Fh setting that the manufacturer code 62h is first
output. For as long as the clock input is continued, 1Eh of the device code is output continuously, followed by the
repeated output of 62h and 1Eh.
*3: Of the two silicon ID commands, it is for the command with the ABh setting that manufacturer code 62h is first
output when address A0 is "0", and the device code 1Eh is first output when address A0 is "1".
Addresses A7 to A1 are "don't care". For as long as the clock input is continued, 62h and 1Eh are repeatedly
output.
No.A1066-4/21
LE25FU406B
Device Operation
The LE25FU406B features electrical on-chip erase functions using a single 2.5V power supply, that have been added to
the EPROM functions of the industry standard that support serial interfaces. Interfacing and control are facilitated by
incorporating the command registers inside the chip. The read, erase, program and other required functions of the
device are executed through the command registers. The command addresses and data input in accordance with "Table
2 Command Settings" are latched inside the device in order to execute the required operations. "Figure 3 Serial Input
Timing" shows the timing waveforms of the serial data input. First, at the falling CS edge the device is selected, and
serial input is enabled for the commands, addresses, etc. These inputs are introduced internally in sequence starting with
bit 7 in synchronization with the rising SCK edge. At this time, output pin SO is in the high-impedance state. The
output pin is placed in the low-impedance state when the data is output in sequence starting with bit 7 synchronized to
the falling clock edge during read, status register read and silicon ID. Refer to "Figure 4 Serial Output Timing" for the
serial output timing.
The LE25FU406B supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of
SCK is high.
Figure 3 Serial Input Timing
tCPH
CS
tCLS
SCK
tDS
SI
tDH
tCSS
tCLHI
tCLLO tCSH
tCLH
DATA VALID
SO
High Impedance
High Impedance
Figure 4 Serial Output Timing
CS
SCK
tCLZ
SO
tHO
tCHZ
DATA VALID
tV
SI
No.A1066-5/21
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