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10N80

Description
N-Channel Power MOSFET
File Size335KB,6 Pages
ManufacturerNell
Websitehttps://www.nellsemi.com
Download Datasheet View All

10N80 Overview

N-Channel Power MOSFET

SEMICONDUCTOR
10N80 Series
N-Channel Power MOSFET
10A, 800Volts
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
10N80
is a three-terminal silicon device
with current conduction capability of 10A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 800V, and max. threshold voltage of 5 volts.
D
They are designed for use in applications such as
switched mode
power supplies, DC to DC converters,
PWM
motor controls, bridge circuits and general
purpose switching applications.
G
D
S
TO-3PB
(
10N80B)
G
DS
TO-220F
(
10N80AF)
FEATURES
R
DS(ON)
= 1.1Ω @ V
GS
= 10V
Ultra low gate charge(58nC max.)
Low reverse transfer capacitance
(C
RSS
= 15pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
D (Drain)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
10
800
1.1 @ V
GS
= 10V
58
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
800
800
±30
UNIT
V
T
C
=25°C
T
C
=100°C
10
6.2
A
40
10
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
TO-3PB
Total power dissipation
T
C
=25°C
l
AR
=10A, R
GS
=50Ω,
V
GS
=10V
l
AS
=10A,
L
=17.3mH
24
mJ
920
4
240
W
37
1.92
°
C/W
V /ns
P
D
Linear derating factor above T
C
=25
°
C
T
J
T
STG
T
L
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
l
AS
=10
A, L
=17.3
mH
,
V
DD
=50
V
,
R
GS
=25
Ω
,
starting T
J
=25
°C.
3
.
I
SD
≤ 10
A, di/dt
≤ 200
A/µs, V
DD
V
(BR)DSS
, starting T
J
= 25
°C.
TO-220F
TO-3PB
TO-220F
T
C
=25°C
0.296
-55 to 150
-55 to 150
ºC
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
www.nellsemi.com
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