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Datasheet> All Categories > Discrete semiconductor> The transistor> FQI2N60TU
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FQI2N60TU

Description
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size614KB，11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FQI2N60TU Overview

Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

FQI2N60TU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-262
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)140 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2.4 A
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance4.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)64 W
Maximum pulsed drain current (IDM)9.6 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

FQI2N60TU Preview

FQB2N60 / FQI2N60
April 2000
QFET
FQB2N60 / FQI2N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
TM
Features
•
•
•
•
•
•
2.4A, 600V, R
DS(on)
= 4.7Ω @V
GS
= 10 V
Low gate charge ( typical 9.0 nC)
Low Crss ( typical 5.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
G
!
! "
"
"
!
S
Absolute Maximum Ratings

Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB2N60 / FQI2N60
600
2.4
1.5
9.6
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
140
2.4
6.4
4.5
3.13
64
0.51
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.95
40
62.5
Units
°CW
°CW
°CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2N60 / FQI2N60
Electrical Characteristics
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.4
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 1.2 A
V
DS
= 50 V, I
D
= 1.2 A
(Note 4)
3.0
--
--
--
3.7
2.45
5.0
4.7
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
270
40
5
350
50
7
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 2.4 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 300 V, I
D
= 2.4 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 2.4 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 2.4 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
180
0.72
2.4
9.6
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 45mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD

2.4A, di/dt

200A/µs, V
DD

BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width

300µs, Duty cycle

2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2N60 / FQI2N60
Typical Characteristics
I
D
, Drain Current [A]
10
I
D
, Drain Current [A]
0
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
150
10
0
25
-55
10
-1

Notes :
1. 250 Pulse Test
s
2. T
C
= 25

Notes :
1. V
DS
= 50V
2. 250 Pulse Test
s
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
10
R
DS(ON)
[

],
Drain-Source On-Resistance
V
GS
= 20V
8
I
DR
, Reverse Drain Current [A]
V
GS
= 10V
6
10
0
4
150
25

Notes :
1. V
GS
= 0V
2. 250 Pulse Test
s
2

Note : T
J
= 25
0
0
1
2
3
4
5
6
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
V
DS
= 120V
10
400
V
DS
= 300V
V
DS
= 480V
C
iss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
300
C
oss
6
200
C
rss
100

Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
2

Note : I
D
= 2.4A
0
-1
10
0
10
0
10
1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2N60 / FQI2N60
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Norm
alized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0

Notes :
1. V
GS
= 10 V
2. I
D
= 1.2 A
0.9

Notes :
1. V
GS
= 0 V
2. I
D
= 250

A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
Operation in This Area
is Limited by R
DS(on)
10
1
2.0
100
µ
s
I
D
, Drain Current [A]
1 ms
10 ms
10
0
I
D
, Drain Current [A]
3
1.5
DC
1.0
10
-1

Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.5
10
-2
10
0
10
1
10
2
10
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [

]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5
0 .2
0 .1
10
-1

N o te s :
1 . Z

J C
( t) = 1 .9 5

/ W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z

J C
( t)
0 .0 5
0 .0 2
0 .0 1
s i n g le p u ls e
P
DM
t
1
t
2
Z

JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2N60 / FQI2N60
Gate Charge Test Circuit & Waveform
50K
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
Q
gs
Q
gd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
10V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
DD
DUT
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
I
D
(t)
V
DD
t
p
10V
V
DS
(t)
Time
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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