SEMICONDUCTOR
1N60 Series
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(1.2A, 600Volts)
DESCRIPTION
The Nell
1N60
is a three-terminal silicon
device with current conduction capability
of 1.2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode
power supplies, DC to DC
converters,
PWM
motor controls, bridge circuits
and general purpose switching applications.
D
D
G
S
G
D
S
TO-252
(D-PAK)
(1N60G)
TO-251
(I-PAK)
(1N60F)
FEATURES
R
DS(ON)
= 11.5Ω@V
GS
= 10V
Ultra low gate charge(6nC max.)
Low reverse transfer capacitance
(C
RSS
= 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
D
G
D
GD
S
TO-220AB
(1 N60A )
S
TO-220F
(1
N60A
F)
D (Drain)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
1.2
600
1.15 @ V
GS
= 10V
6
G
D
S
TO-92
(1 N60E )
G
(Gate)
S (Source)
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Page 1 of 8
SEMICONDUCTOR
1N60 Series
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
T
C
=25°C
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
600
600
±30
1.2
0.74
UNIT
V
T
C
=100°C
Pulsed Drain current(Note 1)
Avalanche current(Note
1
)
Repetitive avalanche energy(Note
1
)
Single pulse avalanche energy (Note
2
)
Peak diode recovery dv/dt(Note 3)
TO-251/ TO-252
P
D
Total power dissipation
T
C
=25°C TO-220AB
TO-220F
T
A
=25°C TO-92
T
J
T
STG
T
L
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
I
AS
= 1
A, V
DD
= 50V,
L
= 60mH,
R
GS
= 25Ω,
starting T
J
=25°C.
3
.
I
SD
≤ 1.2
A, di/dt
≤ 200
A/µs, V
DD
≤
V
(BR)DSS
, starting T
J
=25°C.
A
4.8
1.2
I
AR
=1A, R
GS
=50Ω, V
GS
=10V
I
AS
=1A, L = 60mH
4
mJ
50
4.5
28
40
W
21
1
-55 to 150
-55 to 150
1.6mm from case
For TO-220AB / TO-220F
300
10 (1.1)
lbf . in (N . m)
ºC
V /ns
THERMAL RESISTANCE
SYMBOL
PARAMETER
TO-251/ TO-252
R
th(j-c)
Thermal resistance, junction to case
TO-220AB
TO-220F
TO-251/TO-252
R
th(j-a)
TO-220AB
Thermal resistance, junction to ambient
TO-220F
TO-92
62.5
140
Min.
Typ.
Max.
4.5
3.1
6
110
62.5
ºC/W
UNIT
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Page 2 of 8
SEMICONDUCTOR
1N60 Series
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
OFF CHARACTERISTICS
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
I
D
= 250µA, V
GS
= 0V
I
D
= 250µA, V
DS
= V
GS
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V
T
C
= 25°C
T
C
=125°C
600
0.4
10
V
V/ºC
μA
100
100
nA
-100
▲
V
(BR)DSS
/
▲
T
J
I
DSS
Gate to source forward leakage current
I
GSS
Gate to source reverse leakage current
ON CHARACTERISTICS
R
DS(ON)
V
GS(TH)
Static drain to source on-state resistance
Gate threshold voltage
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
I
D
= 0.6A, V
GS
= 10V
V
GS
=V
DS
, I
D
=250μA
2.0
9.5
11.5
4.0
Ω
V
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25V, V
GS
= 0V, f =1MHz
120
20
3.0
150
25
4.0
pF
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DD
= 480V, V
GS
= 10V, I
D
= 1.2A
(Note 1, 2)
V
DD
= 300V, V
GS
= 10V,
I
D
= 1.2A, R
GS
= 50Ω (Note 1, 2)
5
25
7
25
5.0
1.0
2.5
20
60
25
60
6.0
nC
ns
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 1.2A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.4
1.2
UNIT
V
I
SM
Pulsed source current
G
(Gate)
4.8
A
S (Source)
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 1.2A, V
GS
= 0V,
dI
F
/dt = 100A/µs
160
0.3
ns
μC
Note:
1.
Pulse test: Pulse width
≤ 300µ
s, duty cycle
≤ 2%.
2.
Essentially independent of operating temperature.
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Page 3 of 8
SEMICONDUCTOR
1N60 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
1
Current rating, I
D
1 = 1.2A
N 60
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
60 = 600V
Package type
A
=
TO-220AB
AF
=
TO-220F
E
=
TO-92
F
=
TO-251(I-PAK)
G
=
TO-252(D-PAK)
■
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V
DS
V
GS
(Driver)
Period
P.W.
D=
P.W.
Period
V
GS
=10V
-
+
-
l
SD
(D.U.T.)
L
l
FM
, Body Diode forward current
di/dt
l
RM
Body Diode Reverse Current
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R G
* l
SD
controlled by pulse period
* D.U.T.-Device under test
V
DD
V
DS
(D.U.T.)
Body Diode Recovery dv/dt
V
DD
V
GS
Body Diode
Forward Voltage Drop
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Page 4 of 8
SEMICONDUCTOR
1N60 Series
RoHS
RoHS
Nell High Power Products
■
TEST CIRCUITS AND WAVEFORMS
(Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
R
L
V
DS
V
GS
R
G
V
DS
90%
D.U.T.
10V
Pulse Width
≤ 1µs
Duty Factor
≤ 0.1%
V
DD
V
GS
10%
t
d(ON)
t
R
t
d(OFF)
t
F
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
V
GS
50kΩ
12V
0.2µF
0.3µF
Same Type as
D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V
DS
BV
DSS
l
AS
R
G
D.U.T.
10V
t
p
Time
t
p
V
DD
V
DD
l
D(t)
V
DS(t)
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Page 5 of 8
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