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K3N6C1500C-TC15

Description
MASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44
Categorystorage    storage   
File Size73KB,4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K3N6C1500C-TC15 Overview

MASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44

K3N6C1500C-TC15 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionSOP,
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time150 ns
Other featuresALSO CONFIGURABLE AS 2M X 16
JESD-30 codeR-PDSO-G44
JESD-609 codee0
memory density33554432 bit
Memory IC TypeMASK ROM
memory width8
Number of functions1
Number of terminals44
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
K3N6C1000C-TC(E)
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. K3N6C1000C-TC(E) : 44-TSOP2-400
CMOS MASK ROM
GENERAL DESCRIPTION
The K3N6C1000C-TC(E) is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 4,194,304 x 8 bit(byte mode) or as
2,097,152 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N6C1000C-TC(E) is packaged in a 44-TSOP2.
FUNCTIONAL BLOCK DIAGRAM
A
20
.
.
.
.
.
.
.
.
A
0
A
-1
X
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
PRODUCT INFORMATION
Product
K3N6C1000C-TC
K3N6C1000C-TE
Operating
Temp Range
0°C~70°C
5V
-20°C~85°C
100
Vcc Range
(Typical)
Speed
(ns)
Y
BUFFERS
AND
DECODER
SENSE AMP.
BUFFERS
PIN CONFIGURATION
N.C
1
2
3
4
5
6
7
8
9
11
44 A
20
43 A
19
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
35 A
15
. . .
CE
OE
BHE
CONTROL
LOGIC
Q
0
/Q
8
Q
7
/Q
15
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
0
A
1
10
Pin Name
A
0
- A
20
Q
0
- Q
14
Q
15
/A
-1
BHE
CE
OE
V
CC
V
SS
N.C
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power (+5V)
Ground
No Connection
TSOP2
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
CE 12
V
SS
13
OE 14
Q
0
Q
8
15
16
Q
1
17
Q
9
18
Q
2
Q
10
19
20
Q
3
21
Q
11
22
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