K3N6C1500C-TE15 datasheet, PDF

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K3N6C1500C-TE15: DescriptionMASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44; Categorystorage storage; File Size73KB，4 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K3N6C1500C-TE15 Overview

MASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44

K3N6C1500C-TE15 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	SOP,
Contacts	44
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	150 ns
Other features	ALSO CONFIGURABLE AS 2M X 16
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
memory density	33554432 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	44
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	4MX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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K3N6C1000C-TC(E)

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

•

Fast access time : 100ns(Max.)

•

Supply voltage : single +5V

•

Current consumption

Operating : 50mA(Max.)

Standby : 50µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

-. K3N6C1000C-TC(E) : 44-TSOP2-400

CMOS MASK ROM

GENERAL DESCRIPTION

The K3N6C1000C-TC(E) is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 4,194,304 x 8 bit(byte mode) or as

2,097,152 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with a 5V single power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3N6C1000C-TC(E) is packaged in a 44-TSOP2.

FUNCTIONAL BLOCK DIAGRAM

-1

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

PRODUCT INFORMATION

Product

K3N6C1000C-TC

K3N6C1000C-TE

Operating

Temp Range

0°C~70°C

-20°C~85°C

100

Vcc Range

(Typical)

Speed

(ns)

BUFFERS

AND

DECODER

SENSE AMP.

BUFFERS

PIN CONFIGURATION

N.C

44 A

43 A

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

. . .

BHE

CONTROL

LOGIC

Pin Name

- A

- Q

-1

BHE

N.C

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power (+5V)

Ground

No Connection

TSOP2

34 A

33 BHE

32 V

31 Q

-1

30 Q

29 Q

28 Q

27 Q

26 Q

25 Q

24 Q

23 V

CE 12

OE 14

K3N6C1000C-TC(E)

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