SEMICONDUCTOR
5N90 Series
N-Channel Power MOSFET
(5A, 900Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
5N90
is a three-terminal silicon device with
current conduction capability of 5A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode
power supplies, DC to DC converters,
PWM
motor controls, bridge circuits and general
purpose switching applications.
G
D
D
S
TO-220AB
(5N90A)
GD
S
TO-220F
(5N90AF)
FEATURES
R
DS(ON)
= 2.80Ω @ V
GS
= 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C
RSS
= 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
D (Drain)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
5
900
2.80 @ V
GS
= 10V
40
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
T
C
=25°C
T
C
=100°C
VALUE
900
900
±30
5
3.1
12
5
UNIT
V
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation ( Derating factor above 25
°
C )
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
TO-220AB
TO-220F
I
AR
=5A, R
GS
=50Ω, V
GS
=10V
I
AS
=5A, L=52.8mH
A
5.1
660
4.0
125
38
-55 to 150
-55 to 150
300
10 (1.1)
mJ
V /ns
W( W /
°
C
)
ºC
lbf . in (N . m)
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
=50V, L=52.8mH, I
AS
=5A, R
GS
=25Ω,starting T
J
=25˚C
3
.
I
SD
≤
5.4A, di/dt
≤ 200A/µs,
V
DD
≤
V
(BR)DSS
, starting T
J
=
25
°C.
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Page 1 of 8
SEMICONDUCTOR
5N90 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min.
Typ.
Max.
1.0
3.25
62.5
62.5
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
OFF CHARACTERISTICS
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
I
D
= 250μA, V
GS
= 0V
I
D
= 250μA, V
DS
=V
GS
V
DS
=900V, V
GS
=0V
V
DS
=720V, V
GS
=0V
T
C
=25°C
T
C
=125°C
900
1.0
10
V
V/ºC
μA
100
100
nA
-100
▲
V
(BR)DSS
/
▲
T
J
I
DSS
Gate to source forward leakage current
I
GSS
Gate to source reverse leakage current
ON CHARACTERISTICS
R
DS(ON)
V
GS(TH)
g
fs
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
=10V, l
D
=2.5A
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, l
D
=2.5A (Note 1)
3
2.25
2.8
5
Ω
V
S
4.0
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
1200
110
15
1550
145
20
pF
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DD
= 720V, V
GS
=10V
I
D
=5A, (Note1,2)
V
DD
=450V, V
GS
=10V
I
D
=5A, R
GS
=25Ω (Note1,2)
28
65
65
50
31
7.2
15
65
140
140
110
40
nC
ns
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 5A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
MIN.
TYP.
MAX.
1.4
5
A
I
SM
Pulsed source current
G
(Gate)
UNIT
V
12
S (Source)
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 5.4A, V
GS
= 0V,
dI
F
/dt = 100A/µs
610
5.30
ns
μC
Note:
1.
Pulse test: Pulse width
≤ 300
µs,
duty cycle
≤ 2%.
2.
Essentially independent of operating temperature.
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Page 2 of 8
SEMICONDUCTOR
5N90 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
5
Current rating, I
D
5 = 5A
N 90
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
90 = 900V
Package type
A
=
TO-220AB
AF
=
TO-220F
■
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V
DS
V
GS
(Driver)
Period
P.W.
D=
P.W.
Period
V
GS
=10V
-
+
-
l
SD
(D.U.T)
L
l
FM
, Body Diode forward current
di/dt
l
RM
Body Diode Reverse Current
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R G
* l
SD
controlled by pulse period
* D.U.T.-Device under test
V
DD
V
DS
(D.U.T)
Body Diode Recovery dv/dt
V
DD
V
GS
Body Diode
Forward Voltage Drop
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Page 3 of 8
SEMICONDUCTOR
5N90 Series
RoHS
RoHS
Nell High Power Products
■
TEST CIRCUITS AND WAVEFORMS
(Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
R
L
V
DS
V
GS
R
G
V
DS
90%
D.U.T.
10V
Pulse Width
≤ 1µs
Duty Factor
≤ 0.1%
V
DD
V
GS
10%
t
d(OFF)
t
d(ON)
t
R
t
F
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
V
GS
50kΩ
12V
0.2µF
0.3µF
Same Type as
D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V
DS
BV
DSS
l
AS
R
G
D.U.T.
10V
t
p
Time
t
p
V
DD
V
DD
l
D(t)
V
DS(t)
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Page 4 of 8
SEMICONDUCTOR
5N90 Series
RoHS
RoHS
Nell High Power Products
■
TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
10
9
8
8
V GS
Top: 15.0V
10.0V
7.0V
6.0V
5.0V
Bottorm: 4.0V
Fig.2 Transfer characteristics
1. 250µs Pulse Test
2. T
C
= 25°C
15V
7
T c = -25 ºC
Drain current, l
D
(A)
Drain current, l
D
(A)
10V
7V
6
25ºC
7
6
5
4
3
2
5
4
3
2
1
0
Note:
1. V
DS
= 20V
2. 250µs Pulse Test
6V
75ºC
5V
1
V
GS
= 4V
0
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
Drain-source voltage, V
DS
(V)
Gate-source voltage, V
GS
(V)
Fig.3 On-Resistance variation vs. Gate voltage
9
8
Fig.4 On-State resistance vs. Case temperature
10
Single pulse
Drain-to-Source
on-resisrance, R
DS(ON)
(Ω)
Drain-to-Source On-State
Resistance, R
DS(ON)
(Ω)
Note:
1. I
D
= 2.5A
2. Single pulse
9
8
7
6
5
4
3
2
1
V
G
S
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9 10
11 12 13 14 15
25°C
-25°C
T c = 75° C
0
=1
V,
I
D
=2
.5
A
0
-50
-25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
GS
(V)
Case temperature, T
C
(°C)
Fig.5 Typical forward transcondutance
7
5
3
2
T c = -25° C
T c = 25°C
Fig.6 Typical source-drain diode forward voltage
Forward transcondutance, g
fS
(S)
Reverse drain current, I
SD
(A)
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
V
GS
= 0V
Single pulse
1.0
7
5
3
2
0.1
7
5
3
0.01
2 3
5 7
0.1
75°C
T c = 75° C
T c = 25°C
T c = -25° C
Note:
1. V
DS
= 20V
2. 20µs Pulse Test
2 3
5 7
1.0
2 3
5 7
10
0.4
0.6
0.8
1.0
1.2
Drain current, I
D
(A)
Source-Drain voltage, V
SD
(V )
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Page 5 of 8
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