SEMICONDUCTOR
RoHS
8N80 Series
RoHS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(8A, 800Volts)
The Nell
8N80
is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters,
PWM
motor controls, bridge circuits,
and general purpose switching applications .
D
G
D
S
TO-220AB
(8 N80A )
GD
S
TO-220F
(8
N80AF
)
FEATURES
R
DS(ON)
= 1.55Ω @ V
GS
= 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(C
RSS
= 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
D
D (Drain)
G
(Gate)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
8
800
1.55 @ V
GS
= 10V
35
D
S
TO-3PB
(8N80B)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
PARAMETER
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
T
C
=25°C
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
VALUE
800
800
±30
8
5.1
UNIT
V
T
C
=100°C
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy(Note 2)
Peak diode recovery dv/dt(Note 3)
TO-3PB
P
D
Total power dissipation (Derate above 25°C)
T
C
=25°C
TO-220AB
TO-220F
T
J
T
STG
T
L
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
.
2
.
I
AS
=
8A,
V
DD
= 50V,
L
= 25mH,
R
GS
= 25Ω,
starting T
J
=25°C.
3
.
I
SD
≤ 8A,
di/dt
≤ 200A/µs,
V
DD
≤
V
(BR)DSS
, starting T
J
=
25°C.
A
32
8
I
AR
=8A, R
GS
=50Ω, V
GS
=10V
I
AS
=8A, L=25mH
17.8
mJ
850
4.5
220 (1.75)
178 (1.43)
59 (0.48)
-55 to 150
-55 to 150
1.6mm from case
300
10 (1.1)
lbf . in (N . m)
ºC
W(W/°C)
V /ns
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Page 1 of 8
SEMICONDUCTOR
RoHS
8N80 Series
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
TO-3PB
R
th(j-c)
Thermal resistance, junction to case
TO-220AB
TO-220F
R
th(j-a)
Thermal resistance, junction to ambient
TO-3PB
TO-220AB/TO-220F
Min.
Typ.
Max.
0.57
0.70
2.10
40
62.5
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
OFF CHARACTERISTICS
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
I
D
= 250µA
,
V
GS
= 0V
I
D
= 250µA, V
DS
=V
GS
V
DS
=800V, V
GS
=0V
V
DS
=640V, V
GS
=0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
T
C
= 25°C
T
C
=125°C
800
0.5
10
100
100
-100
V
V/ºC
μA
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
Gate to source forward leakage current
Gate to source reverse leakage current
nA
ON CHARACTERISTICS
R
DS(ON)
V
GS(TH)
g
fs
Static drain to source on-state resistance
Gate threshold voltage
I
D
=4A, V
GS
= 10V
V
GS
=V
DS
, I
D
=250μA
V
DS
=50V, I
D
=4A
3
1.29
5.6
1.55
5
Ω
V
S
Forward transconductance (Note 1)
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
= 25V, V
GS
= 0V, f =1MHz
1580
135
13
2050
175
17
pF
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
d(OFF)
t
f
Q
G
Q
GS
Q
GD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DD
= 640V, V
GS
= 10V, I
D
= 8A
(Note 1, 2)
V
DD
= 400V, V
GS
= 10V, l
D
= 8A,
R
GS
=
25Ω
(Note 1
, 2
)
40
110
65
70
35
10
14
90
250
140
150
45
nC
ns
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
Is (Is
D
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 8A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.4
8
UNIT
V
I
SM
Pulsed source current
G
(Gate)
32
S (Source)
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
I
SD
= 8A, V
GS
= 0V,
dI
F
/dt = 100A/µs
690
8.2
ns
µC
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
2.
Essentially independent of operating temperature.
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Page 2 of 8
SEMICONDUCTOR
RoHS
8N80 Series
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
8
Current rating, I
D
8 = 8A
N 80
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
80 = 800V
Package type
A
=
TO-220AB
AF
=
TO-220F
B
=
TO-3PB
Fig.1 On-State characteristics
Fig.2 Transfer characteristics
V
GS
10
1
Drain current, l
D
(A)
Drain current, l
D
(A)
Top: 150 V
100 V
80 V
70 V
60 V
Bottorm: 5.5 V
10
1
150°C
-55°C
10
0
25°C
10
0
*Notes:
1.250µs
Pulse test
2.T
c
=25°C
10
-1
*Notes:
1.V
DS
=50V
2.250µs
Pulse test
10
-1
10
-1
10
0
10
1
2
4
6
8
10
Drain-to-Source voltage, V
DS
(V)
Gate-Source voltage, V
GS
(V)
Fig.3 On-resistance variation vs. drain
current and gate voltage
Drain-Source on-resistance,
R
DS(ON)
(Ω)
30
Fig.4 Body diode forward voltage vs.
source current
Reverse Drain current , l
DR
(A)
25
10
1
20
V
GS
=20V
V
GS
=10V
10
0
150°C
25°C
*Notes:
1.V
GS
=0V
2.250μs
Pulse test
15
*Note:T
J
=25°C
10
0
4
8
12
16
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Drain current, I
D
(A)
Source-drain voltage, V
SD
(V)
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Page 3 of 8
SEMICONDUCTOR
RoHS
8N80 Series
RoHS
Nell High Power Products
Fig.5 Capacitance characteristics
Fig.6 Gate charge characteristics
2500
12
Gate-Source voltage,V
GS
(V)
C
ISS
=C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
V
DS
= 640V
Capacitance (pF)
2000
C
ISS
1500
10
8
6
4
2
0
V
DS
= 400V
V
DS
= 160V
1000
C
OSS
Notes:
1.V
GS
=0V
2.f=1MHz
500
C
RSS
*Note:I
D
=8A
0
10
-1
10
0
10
1
0
10
20
30
40
Drain-Source voltage, V
DS
(V)
Total gate charge, Q
G
(nC)
Fig.7 Breakdown voltage variation
vs. temperature
Drain-source breakdown voltage, BV
DSS
Drain-Source on-resistance, R
DS(ON)
1.2
3
2.5
2
1.5
Fig.8 On-resistance variation
vs. Junction temperature
1.1
1
1
0.5
0.0
-100
*Notes:
1.V
GS
=10V
2.I
D
=4A
0.9
*Notes:
1.V
GS
=0V
2.I
D
=250µA
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Junction temperature, T
J
(°C)
Junction temperature, T
J
(°C)
Fig.9-1 Maximum safe operating area
for 8N80B
10
2
Fig.9-2 Maximum safe operating area
for 8N80A
10
2
Operation in This Area is Limited by R
DS(on)
10µs
Operation in This Area is Limited by R
DS(on)
10µs
Drain Current, l
D
(A)
10
1
100µs
1ms
10ms
Drain Current, l
D
(A)
10
1
100µs
1ms
10ms
10
0
DC
10
0
DC
10
-1
*Notes:
1.T
J
=25°C
2.T=150°C
3.
Single pulse
10
-1
*Notes:
1.T
J
=25°C
2.T=150°C
3.
Single pulse
0
10
-2
10
0
-2
10
10
1
10
2
10
3
10
10
1
10
2
10
3
Drain-source voltage, V
DS
(V)
Drain-source voltage, V
DS
(V)
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Page 4 of 8
SEMICONDUCTOR
RoHS
8N80 Series
RoHS
Nell High Power Products
Fig.9-3 Maximum safe operating area
for 8N80AF
10
10
2
Fig.10 Maximum drain current vs. case
temperature
Operation in This Area is Limited by R
DS(ON)
10µs
Drain current, I
D
(A)
10
1
100µs
1ms
10ms
Drain current, I
D
(A)
8
6
10
0
DC
4
10
-1
*Notes:
1.T
C
=25°C
2.T
J
=150°C
3.
Single pulse
0
2
10
-2
0
10
2
10
10
1
10
3
25
50
75
100
125
150
Case temperature, T
C (°C)
Case temperature, T
C (°C)
Fig.11-1 Transient Thermal Response Curve for 8N80A
10
0
Thermal response, R
th(j-c)
(t)
D
= 0.5
0.2
10
-1
0.1
P
DM
0.05
t
1
0.02
0.01
Single pulse
10
-2
t
2
Notes:
1.R
th(j-c)
(t)=0.7°C/W Max.
2.Duty factor, D=t1/t2
3.T
JM
-Tc=P
DM
×
R
th(j-c)
(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square wave pulse duration , t
1
(sec.)
Fig.11-2 Transient Thermal Response Curve for 8N80AF
Thermal response, R
th(j-c)
(t)
10
0
D
= 0.5
0.2
0.1
0.05
10
-1
0.02
0.01
Single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
P
DM
t
1
t
2
Notes:
1.R
th(j-c)
(t)=
2
.
1
°C/W
Max.
2.Duty factor, D=t1/t2
3.T
JM
-Tc=P
DM
×
R
th(j-c)
(t)
10
0
10
1
Square wave pulse duration , t
1
(sec.)
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Page 5 of 8
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