EEWORLDEEWORLDEEWORLD

Part Number

Search

M55342H08B110HCWS

Description
RESISTOR, THIN FILM, 0.8 W, 2 %, 50 ppm, 110000 ohm, SURFACE MOUNT, 2010, CHIP, GREEN
CategoryPassive components    The resistor   
File Size85KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

M55342H08B110HCWS Overview

RESISTOR, THIN FILM, 0.8 W, 2 %, 50 ppm, 110000 ohm, SURFACE MOUNT, 2010, CHIP, GREEN

M55342H08B110HCWS Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
package instructionSMT, 2010
Reach Compliance Codecompliant
Other featuresNON-INDUCTIVE
structureRectangular
Installation featuresSURFACE MOUNT
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package height0.254 mm
Package length5.309 mm
Package formSMT
Package width2.489 mm
method of packingWAFFLE PACK
Rated power dissipation(P)0.8 W
Rated temperature70 °C
GuidelineMIL-PRF-55342
resistance110000 Ω
Resistor typeFIXED RESISTOR
size code2010
surface mountYES
technologyTHIN FILM
Temperature Coefficient50 ppm/°C
Terminal shapeWRAPAROUND
Tolerance2%
Operating Voltage150 V
E/H (Military M/D55342)
www.vishay.com
Vishay Dale Thin Film
QPL MIL-PRF-55342 Qualified
Thin Film Resistor, Surface Mount Chip
FEATURES
• Established reliability, “R” failure rate level
(100 ppm), C = 2
• High purity alumina substrate 99.6 % purity
• Wraparound termination featuring a tenacious adhesion
layer covered with an electroplated nickel barrier layer for
+ 150 °C operating conditions
• Very low noise and voltage coefficient
(< - 25 dB, 0.5 ppm/V)
• Non-inductive
• Laser-trimmed tolerances ± 0.1 %
• Wraparound resistance less than 0.010
typical
• In-lot tracking less than 5 ppm/°C
• Complete MIL-testing available in-house
• Antistatic waffle pack or tape and reel packaging available
• Military/aerospace/QPL
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Actual Size
M55342/02
Thin Film Mil chip resistors feature all sputtered wraparound
termination for excellent adhesion and dimensional
uniformity. They are ideal in applications requiring stringent
performance requirements. Established reliability is assured
through 100 % screening and extensive environmental lot
testing. Wafer is sawed producing exact dimensions and
clean, straight edges.
Note
• Specification changed by D.S.C.C. from MIL-R-55342 to
MIL-PRF-55342
CONSTRUCTION
Passivation
Resistor Film
Solder
Coating
Nickel Barrier
High Purity
Alumina Substrate
Adhesion Layer
TYPICAL PERFORMANCE
ABSOLUTE
TCR
TOL.
25
0.1
STANDARD ELECTRICAL SPECIFICATIONS
TEST
Material
Resistance Range
TCR: Absolute
Tolerance: Absolute
Stability: Absolute
Stability: Ratio
Voltage Coefficient
Working Voltage
Operating Temperature Range
Storage Temperature Range
Noise
Shelf Life Stability: Absolute
SPECIFICATIONS
Passivated nichrome
10
to 6.19 M
± 25 ppm/°C to ± 300 ppm/°C
± 0.1 % to ± 10 %
R
± 0.02 %
-
0.1 ppm/V
30 V to 200 V
- 55 °C to + 125 °C
- 55 °C to + 150 °C
< - 25 dB
R
± 0.01 %
CONDITIONS
-
-
- 55 °C to + 125 °C
+ 25 °C
2000 h at + 70 °C
-
-
-
-
-
-
1 year at + 25 °C
COMPONENT RATINGS
CASE SIZE
POWER
RATING
(mW)
50
125
200
150
225
150
250
800
1000
500
50
100
WORKING
VOLTAGE
(V)
RESISTANCE RANGE () BY CHARACTERISTICS TOLERANCE
E
E
H, K, M
H, K, M
(0.1 %)
(1 %, 2 %, 5 %)
(0.1 %)
(1 %, 2 %, 5 %)
49.9 to 150K
49.9 to 150K
20 to 150K
20 to 150K
49.9 to 301K
49.9 to 301K
20 to 301K
20 to 301K
49.9 to 649K
49.9 to 649K
10 to 649K
10 to 649K
49.9 to 1.69M
49.9 to 1.69M
10 to 1.69M
10 to 1.69M
49.9 to 3.16M
49.9 to 3.16M
10 to 3.16M
10 to 3.16M
49.9 to 475K
49.9 to 475K
10 to 475K
10 to 475K
49.9 to 1.5M
49.9 to 1.5M
10 to 1.5M
10 to 1.5M
49.9 to 4.02M
49.9 to 4.02M
10 to 4.02M
10 to 4.02M
49.9 to 6.19M
49.9 to 6.19M
10 to 6.19M
10 to 6.19M
49.9 to 1M
49.9 to 1M
49.9 to 1M
49.9 to 1M
49.9 to 100K
49.9 to 100K
20 to 100K
20 to 100K
49.9 to 258K
49.9 to 261K
10 to 258K
10 to 261K
M55342/01
40
M55342/02
40
M55342/03
75
M55342/04
125
M55342/05
175
M55342/06
50
D55342/07
100
M55342/08
150
M55342/09
200
M55342/10
75
M55342/11
30
M55342/12
50
Note
• Values listed are a guide, refer to MIL spec for value/tolerance allowance
Revision: 08-Jun-11
1
Document Number: 60018
For technical questions, contact:
thinfilm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Xunwei 4418 development board/6818 development board teaches you how to modify the screen
Development platform: Xunwei iTOP-4418/6818 development board[/size][/font][/color][/align][align=left][color=rgb(51, 51, 51)][font=Verdana, Arial, Helvetica, sans-serif][size=14px]To modify the 4418&...
隋青青 Embedded System
GPRS, CDMA wireless LED information release system based on WEB platform
1. Overview Since the information input of traditional LED display screens can only be carried out by directly connecting to the computer through a data cable, the traditional LED display screen canno...
xmyuneng RF/Wirelessly
Please help me find out why this serial port program has no effect when downloaded to the board.
usart.h #ifndef _USART_H #define _USART_H #include "stm32f10x.h" #include "stdio.h" void Usart_Init(unsigned long int Rate); int fputc(int ch, FILE *f); #endifpbdata.h #ifndef _PBDATA_H #define _PBDAT...
江苏大学 stm32/stm8
Problems with using STC12C5410AD to generate adjustable duty cycle PWM
//Use stc12c5410ad to output PWM waveform, the system clock is 27MHz, the output PWM fixed frequency is 8.7kHz, and the duty cycle is adjustable #include"stc12c5410ad.h" #define uchar unsigned char #d...
coney 51mcu
Qingke EMW3162-P Development Board---Unboxing Test and Hardware Analysis
I finally received the EMW3162-P development board. I am grateful to the forum for giving me this opportunity to review it. I also got another kit because of this opportunity. I am so happy. I will fi...
qwerghf RF/Wirelessly
AIGaN/GaN H EMT power amplifier design
In the case that small signal parameters are not suitable for the design of microwave power amplifiers and large signal parameters are not easy to obtain, the A1GaN/GaN HEMT microwave power amplifier ...
啊小罗 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 976  279  2848  479  2172  20  6  58  10  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号