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1N4786

Description
Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt, DO-7,
CategoryDiscrete semiconductor    diode   
File Size57KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N4786 Overview

Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt, DO-7,

1N4786 Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.0747
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage25 V
Maximum reverse current5e-9 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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