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FT61981L-15LM

Description
Standard SRAM, 16KX4, 15ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28
Categorystorage    storage   
File Size631KB,14 Pages
ManufacturerForce Technologies Ltd.
Download Datasheet Parametric View All

FT61981L-15LM Overview

Standard SRAM, 16KX4, 15ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28

FT61981L-15LM Parametric

Parameter NameAttribute value
MakerForce Technologies Ltd.
Parts packaging codeQLCC
package instructionQCCN,
Contacts28
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time15 ns
JESD-30 codeR-CQCC-N28
length13.97 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals28
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.905 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width8.89 mm
FT61981/FT61981L
FT61982/FT61982L
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 ns (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation (Commercial/Military)
Output Enable and Dual Chip Enable Functions
5V ± 10% Power Supply
ULTRA HIGH SPEED 16K x 4
CMOS STATIC RAMS
Data Retention with 2.0V Supply, 10 µA Typical
Current (FT61981L/1982L Military)
Separate Inputs and Outputs
FT61981/L
Input Data at Outputs during Write
FT61982/L
Outputs in High Z during Write
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil DIP, SOJ
– 28-Pin 350 x 550 mil LCC
– 28-Pin CERPACK
DESCRIPTION
The
FT61981/L
and
FT61982/L
are 65,536-bit (16Kx4)
ultra high-speed static RAMs similar to the
FT6198,
but
with separate data I/O pins. The
FT61981/L
feature a
transparent write operation when
OE
is low; the outputs
of the
FT61982/L
are in high impedance during the write
cycle. All devices have low power standby modes. The
RAMs operate from a single 5V ± 10% tolerance power
supply. With battery backup, data integrity is maintained
for supply voltages down to 2.0V. Current drain is
typically 10 µA from 2.0V supply.
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption. For the
FT61982L
and
FT61981L,
power is only 5.5 mW standby
with CMOS input levels.
The
FT61981/L
and
FT61982/L
are available in 28-pin 300
mil DIP and SOJ, 28-pin 350x550 mil LCC and a 28-pin
CERPACK package providing excellent board level den-
sities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
FT61982
FT61981
DIP (P5, C5, D5-2), SOJ (J5)
CERPACK (F4) SIMILAR
FT61981/
1982
LCC (L5)
REV 1.1
1/14
2008
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