SEMICONDUCTOR
RoHS
10PT Series
RoHS
Stansard SCRs, 10A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
10
600 to 1000
15
Unit
A
1
2
3
3
2
2
V
mA
1
2
TO-251
(I-PAK)
(10PTxxF)
TO-252
(D-PAK)
(10PTxxG)
DESCRIPTION
The 10PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
2
3
2
1
2
3
TO-220AB
(Non-lnsulated)
(10PTxxA)
2(A)
TO-220AB
(lnsulated)
(10PTxxAI)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=100°C
Tc=90°C
Tc=100°C
Tc=90°C
t = 20 ms
t = 16.7 ms
6.4
100
105
50
50
4
10
1
600
to 1000
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
W
V
A
10
VALUE
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
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Page 1 of 5
SEMICONDUCTOR
RoHS
10PT Series
RoHS
(T
J
= 25
ºC, unless otherwise specified)
10PTxxxx
15
1.3
0.2
30
50
200
1.6
10
2
70
Unit
mA
V
V
mA
mA
V/µs
V
µA
mA
µS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 30Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
t
q
V
D
= V
DRM
, R
L
= 3.3K
Ω
R
GK
= 220Ω, T
j
= 110°C
I
T
= 100mA, Gate open
I
G
= 1.2
×
I
GT
TEST CONDITIONS
Max.
Max.
Min.
Max.
Min.
Min.
T
j
= 25°C
T
j
= 25°C
T
j
= 110°C
T
j
= 110°C
Max.
Max.
Max.
TYP.
V
D
= 67% V
DRM
, Gate open, T
j
= 110°C
I
T
= 20A, t
P
= 380 µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
V
D
= 67% V
DRM
, I
TM
= 12A , V
R
= 25V
dI
TM
= 30A/µs, dV
D
/dt = 50V/µs
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(DC)
Parameter
VALUE
UNIT
°C/W
IPAK/DPAK/TO-220AB
S=0.5 cm² DPAK
2.5
70
100
60
R
th(j-a)
Junction to ambient
IPAK
TO-220AB
°C/W
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
10PTxxA/10PTxxAl
10PTxxF
10PTxxG
V
V
V
800
V
V
V
V
1000
V
V
V
V
15
mA
15
mA
15
mA
TO-220AB
I-PAK
D-PAK
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
10PTxxA
10PTxxAI
10PTxxF
10PTxxG
Note:
xx
=
voltage
MARKING
10PTxxA
10PTxxAI
10PTxxF
10PTxxG
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
BASE Q,TY
50
50
80
80
DELIVERY MODE
Tube
Tube
Tube
Tube
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Page 2 of 5
SEMICONDUCTOR
RoHS
10PT Series
RoHS
ORDERING INFORMATION SCHEME
10 PT 06
Current
10 = 10A,
I
T(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
Fig.1 Maximum average power dissdipation
versus average on-state current
P(W)
12
α=120°
α=90°
α=180°
Fig.2 Correlation between maximum average
power dissipation and maximum
allowable temperature(T
amb
and T
lead
)
P(W)
α=180°
R th =6°C/W
R th =4°C/W
R th =2°C/W
12
10
8
6
T
lead
(°C)
R th =0°C/W
DC
10
8
6
100
105
110
115
120
α=60°
α=30°
4
360°
4
2
I T(AV) (A)
α
2
0
0
1
2
3
0
6
7
8
9
0
20
40
Tamb(°C)
125
60
80
100
120
140
4
5
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Page 3 of 5
SEMICONDUCTOR
RoHS
10PT Series
RoHS
Fig.3 Average on-state current versus case
temperature
12
10
8
α=180°
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Z
th(j-c)
/R
th(j-c)
]
1
I
T
(AV)(A)
DC
TO-251/TO-252
TO-220AB
Z th(j-c)
6
4
2
0.1
TO-220AB
Insulated
Z th(j-a)
T case (°C)
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0.01
1E-3
t p (s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
2.5
2
1.5
1
0.5
0
-40 -30 -20 -10
Fig.6 Surge peak on-state current versus number
of cycles
I
TSM
(A)
120
100
tp=10ms
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
I
GT
I
H
&I
L
80
Tj inital=25°C
One cycle
60
40
20
T j (°C)
0 10 20 30 40 50 60 70 80 90 100 110
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
Fig.8 On-state characteristics (maximum values)
and corresponding values of
l²t
I
TSM
(A),I²t(A²s)
Tj inital=25°C
1000
I
TSM
I
TM
(A)
T j=max
100
100
I²t
10
T j=25°C
10
1
2
t p (ms)
5
10
V
TM
(V)
1
0
1
2
3
4
T j=max
V
t0
=0.82V
Rd=24mΩ
5
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Page 4 of 5
SEMICONDUCTOR
RoHS
10PT Series
RoHS
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
TO-251
(I-PAK)
5.4(0.212)
5.2(0.204)
6.6(0.26)
6.4(0.52)
1.5(0.059)
1.37(0.054)
2.4(0.095)
2.2(0.086)
0.62(0.024)
0.48(0.019)
4T
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
6.2(0.244)
6(0.236)
RoHS
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
4.6(0.181)
4.4(0.173)
0.65(0.026)
0.55(0.021)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
6.6(0.259)
6.4(0.251)
5.4(0.212)
5.2(0.204)
2
2.4(0.095)
2.2(0.086)
1.5(0.059)
1.37(0.054)
0.62(0.024)
0.48(0.019)
1
2
3
9.35(0.368)
10.1(0.397)
6.2(0.244)
6(0.236)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.89(0.035)
0.64(0.025)
0.62(0.024)
0.45(0.017)
4.57(0.180)
2
(A2)
(G)3
1(A1)
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Page 5 of 5
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