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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
May 2006
FOD814 Series, FOD617 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
■
AC input response (FOD814 only)
■
Applicable to Pb-free IR reflow soldering
■
Compact 4-pin package
■
Current transfer ratio in selected groups:
tm
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
■
■
■
■
FOD617A: 40–80%
FOD817: 50–600%
FOD617B: 63–125%
FOD817A:80–160%
FOD617C: 100–200%
FOD817B: 130–260%
FOD617D: 160–320%
FOD817C:200–400%
FOD814: 20–300%
FOD817D:300–600%
FOD814A: 50–150%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
CEO
of 70V guaranteed
Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
FOD617 and FOD817 Series
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
ANODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
CATHODE 2
3 EMITTER
4
FOD814
FOD617/817
1
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Value
Symbol
T
STG
T
OPR
T
SOL
P
TOT
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
C
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate above 90°C
6
50
150
2.9
70
6 (FOD817)
7 (FOD617)
V
V
mA
mW
mW/°C
Continuous Forward Current
Reverse Voltage
Power Dissipation
Derate above 100°C
±50
–
70
1.7
50
6
mW
mW/°C
mA
Units
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Power Dissipation
FOD814
FOD617/817
°C
°C
°C
mW
TOTAL DEVICE
-55 to +150
-55 to +105
200
-55 to +110
260 for 10 sec
2
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
www.fairchildsemi.com
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
Forward Voltage
FOD814
FOD617
FOD817
I
R
C
t
Reverse Leakage Current
Terminal Capacitance
FOD617
FOD817
FOD814
FOD617
FOD817
DETECTOR
I
CEO
Collector Dark Current
FOD814
FOD617C/D
FOD617A/B
FOD817
BV
CEO
Collector-Emitter Breakdown
Voltage
FOD814
FOD617
FOD817
BV
ECO
Emitter-Collector Breakdown
Voltage
FOD814
FOD617
FOD817
V
CE
= 20V, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CE
= 20V, I
F
= 0
I
C
= 0.1mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
C
= 0.1mA, I
F
= 0
I
E
= 10µA, I
F
= 0
I
E
= 10µA, I
F
= 0
I
E
= 10µA, I
F
= 0
–
–
–
–
70
70
70
6
7
6
–
1
1
–
–
–
–
–
–
–
100
100
50
100
–
–
–
–
–
–
V
V
nA
I
F
= ±20mA
I
F
= 60mA
I
F
= 20mA
V
R
= 6.0V
V
R
= 4.0V
V = 0, f = 1kHz
V = 0, f = 1kHz
V = 0, f = 1kHz
–
–
–
–
–
–
–
–
1.2
1.35
1.2
0.001
–
50
30
30
1.4
1.65
1.4
10
10
250
250
250
pF
µA
V
Parameter
Device
Test Conditions
Min.
Typ.*
Max.
Unit
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol DC Characteristic
CTR
Current Transfer
Ratio
Device
FOD814
FOD814A
FOD617A
FOD617B
FOD617C
FOD617D
FOD617A
FOD617B
FOD617C
FOD617D
FOD817
FOD817A
FOD817B
FOD817C
FOD817D
V
CE (sat)
Collector-Emitter
Saturation Voltage
FOD814
FOD617
FOD817
*Typical values at T
A
= 25°C
3
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
www.fairchildsemi.com
Test Conditions
I
F
= ±1mA, V
CE
= 5V
(1)
I
F
= 10mA, V
CE
= 5V
(1)
Min.
20
50
40
63
100
160
Typ.*
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.1
–
0.1
Max.
300
150
80
125
200
320
–
–
–
–
600
160
260
400
600
0.2
0.4
0.2
Unit
%
I
F
= 1mA, V
CE
= 5V
(1)
13
22
34
56
I
F
= 5mA, V
CE
= 5V
(1)
50
80
130
200
300
I
F
= ±20mA, I
C
= 1mA
I
F
= 10mA, I
C
= 2.5mA
I
F
= 20mA, I
C
= 1mA
–
–
–
V
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Transfer Characteristics
(Continued) (T
A
= 25°C Unless otherwise specified.)
Symbol AC Characteristic
f
C
t
r
Cut-Off Frequency
Response Time (Rise)
Device
FOD814
FOD814
FOD617
FOD817
Test Conditions
V
CE
= 5V, I
C
= 2mA, R
L
= 100
Ω
,
-3dB
V
CE
= 2 V, I
C
= 2mA, R
L
= 100
Ω
(2)
Min.
15
–
Typ.* Max. Unit
80
4
–
18
kHz
µs
t
f
Response Time (Fall)
FOD814
FOD617
FOD817
–
3
18
µs
Isolation Characteristics
Symbol
V
ISO
Characteristic
Input-Output Isolation
Voltage
(3)
Device
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
Test Conditions
f = 60Hz, t = 1 min,
I
I-O
≤
2µA
Min.
5000
Typ.*
Max.
Units
Vac(rms)
R
ISO
Isolation Resistance
V
I-O
= 500VDC
5x10
10
1x10
11
—
Ω
C
ISO
Isolation Capacitance
FOD814
FOD617
FOD817
V
I-O
= 0, f = 1 MHz
0.6
1.0
pf
*Typical values at T
A
= 25°C
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
4
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
www.fairchildsemi.com
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