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Datasheet> All Categories > Discrete semiconductor> diode> MBRB10H60HE3_B/I
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MBRB10H60HE3_B/I

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size97KB，4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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MBRB10H60HE3_B/I Overview

Rectifier Diode,

MBRB10H60HE3_B/I Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionR-PSSO-G2
Reach Compliance Codeunknown
Factory Lead Time10 weeks
Other featuresLOW POWER LOSS, FREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage60 V
Maximum reverse current100 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBRB10H60HE3_B/I Preview

MBRB10H60
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
D
2
PAK (TO-263AB)
K
2
1
PIN 1
PIN 2
K
HEATSINK
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
10 A
60 V
150 A
0.61 V
100 μA
175 °C
D
2
PAK
(TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Circuit configuration
MECHANICAL DATA
Case:
D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
as marked
per
Single
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Peak repetitive reverse current at t
p
= 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
, T
STG
MBRB10H60
60
60
60
10
80
150
0.5
10
25
10 000
-65 to +175
mJ
kV
V/μs
°C
A
mJ
A
V
UNIT
Revision: 19-Sep-2018
Document Number: 88780
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB10H60
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 10 A
Maximum instantaneous forward voltage
V
F (1)
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
Maximum reverse current
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
I
R (2)
Rated V
R
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MBRB10H60
TYP.
-
0.57
-
0.68
-
2.0
MAX.
0.71
0.61
0.85
0.71
100
12
μA
mA
V
UNIT
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
MBRB10H60
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
MBRB10H60HE3_B/P
(1)
MBRB10H60HE3_B/I
(1)
UNIT WEIGHT (g)
1.33
1.33
PACKAGE CODE
P
I
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
15
175
Peak Forward Surge Current (A)
Average Forward Current (A)
150
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
10
125
100
5
75
50
0
0
25
50
75
100
125
150
175
25
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 19-Sep-2018
Document Number: 88780
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB10H60
www.vishay.com
Vishay General Semiconductor
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 125 °C
0.1
T
J
= 25 °C
Junction Capacitance (pF)
1000
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
100
0
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
T
J
= 125 °C
0.1
0.01
0.001
T
J
= 25 °C
10
T
J
= 150 °C
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Leakage
Current (mA)
1
0.0001
0
20
40
60
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 19-Sep-2018
Document Number: 88780
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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MBRB10H60HE3_B/I Related Products

MBRB10H60HE3_B/I MBRB10H60HE3_B/P
Description Rectifier Diode, Rectifier Diode,
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
package instruction R-PSSO-G2 D2PAK-3/2
Reach Compliance Code unknown unknown
Factory Lead Time 10 weeks 10 weeks
Other features LOW POWER LOSS, FREE WHEELING DIODE LOW POWER LOSS, FREE WHEELING DIODE
application EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.85 V
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 60 V 60 V
Maximum reverse current 100 µA 100 µA
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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