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MBR1060MFST1G

Description
DIODE RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size123KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MBR1060MFST1G Overview

DIODE RECTIFIER DIODE, Rectifier Diode

MBR1060MFST1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionSO-8FL, DFN5, 6 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.76 V
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals5
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage60 V
Maximum reverse current100 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL

MBR1060MFST1G Preview

MBR1060MFS,
NRVB1060MFS
SWITCHMODE
Power Rectifiers
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Wettable Flanks Option Available
These are Pb−Free Devices
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60 VOLTS
1,2,3
5,6
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 162°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
Unit
V
60
10
10
A
A
MARKING
DIAGRAM
A
1
C
B1060
AYWZZ
C
A
A
Not Used
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B1060
A
Y
W
ZZ
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: d
PD
/d
TJ
< 1/R
qJA
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
MBR1060MFST1G
MBR1060MFST3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
I
FSM
150
A
NRVB1060MFST1G
NRVB1060MFST3G
T
stg
T
J
E
AS
−65
to +175
−55
to +175
150
°C
°C
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3B
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
Rev. 0
1
Publication Order Number:
MBR1060MFS/D
MBR1060MFS, NRVB1060MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
Symbol
R
θJC
Typ
Max
1.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
J
= 125°C)
(i
F
= 10 Amps, T
J
= 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
v
F
V
0.53
0.62
16
0.035
0.65
0.76
mA
30
0.100
i
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
10
T
A
= 125°C
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
T
A
= 150°C
10
T
A
= 125°C
1
T
A
= 25°C
1
T
A
= 25°C
0.1
T
A
=
−40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
T
A
=
−40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
T
A
=
−40°C
0
10
20
30
40
50
60
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 175°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
A
=
−40°C
0
10
20
30
40
50
60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
http://onsemi.com
2
MBR1060MFS, NRVB1060MFS
TYPICAL CHARACTERISTICS
10,000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
R
qJC
= 1.8°C/W
Square Wave
dc
1000
100
10
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
160 180
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
8
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
7
6
5
4
3
2
1
0
0
1
2
3
Figure 6. Current Derating TO−220AB
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
T
J
= 175°C
I
PK
/I
AV
= 5
Square Wave
dc
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
Assumes 25°C ambient and soldered to
a 600 mm
2
oz copper pad on PCB
Single Pulse
0.1
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
http://onsemi.com
3
MBR1060MFS, NRVB1060MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
D1
A
B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0
_
−−−
12
_
0.20 C
E1
2
E
c
4X
q
A1
1
2
3
4
TOP VIEW
3X
C
SEATING
PLANE
0.10 C
A
0.10 C
SIDE VIEW
8X
e
DETAIL A
DETAIL A
b
e/2
1
4
SOLDERING FOOTPRINT*
1.270
3X
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10
0.05
C A B
c
L
0.750
4X
1.000
K
4X
0.965
1.330
M
0.905
4.530
0.475
2X
2X
PIN 5
(EXPOSED PAD)
E2
L1
0.495
3.200
2X
G
D2
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MBR1060MFS/D

MBR1060MFST1G Related Products

MBR1060MFST1G MBR1060MFST3G NRVB1060MFST1G NRVB1060MFST3G
Description DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode
Is it Rohs certified? conform to conform to conform to conform to
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN SO-8FL, DFN5, 6 PIN
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.76 V 0.76 V 0.76 V 0.76 V
JESD-30 code R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 5 5 5 5
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 60 V 60 V 60 V 60 V
Maximum reverse current 100 µA 100 µA 100 µA 100 µA
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
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