SEMICONDUCTOR
RoHS
20PT Series
RoHS
Stansard SCRs, 20A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
20
600 to 1000
3
to
25
Unit
A
V
mA
1
2
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(20PTxxA)
TO-220AB
(lnsulated)
(20PTxxAI)
DESCRIPTION
The 20PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A1 A2
G
A2
2(A)
3(G)
1(K)
TO-263
(D
2
PAK)
(20PTxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
I
T(AV)
TO-263/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=100°C
Tc=80°C
Tc=100°C
13
Tc=80°C
t = 20 ms
t = 16.7 ms
200
220
200
50
4
10
1
600
to 1000
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
W
V
A
20
VALUE
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
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Page 1 of 5
SEMICONDUCTOR
RoHS
20PT Series
RoHS
(T
J
= 25 ºC unless otherwise specified)
20PTxxxx
Unit
D
-
3
25
1.3
0.2
40
60
500
1.6
5
2
0.77
23
mA
V
V
mA
mA
V/µs
V
µA
mA
V
mΩ
Min.
4
10
1.3
0.2
10
20
100
ELECTRICAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
V
D
= 12V, R
L
= 33Ω
Max.
Max.
V
D
= V
DRM
, R
L
= 3.3K
Ω
R
GK
= 220Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 40A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
T
j
= 125°C
Min.
Max.
Min.
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
Parameter
D
2
PAK/TO-220AB
R
th(j-c)
Junction to case
(DC)
TO-220AB insulated
R
th(j-a)
S = 1 cm
2
Junction to ambient
TO-220AB/TO-220AB insulated
60
TO-263( D
2
PAK)
2.1
45
°C/W
VALUE
1.05
UNIT
°C/W
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
20PTxxA/20PTxxAl
20PTxxH
20PTxxA-D / 20PTXXAI-D
20PTxxH-D
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
25
mA
25
mA
4-10 mA
4-10 mA
TO-220AB
D
2
PAK
TO-220AB
D
2
PAK
SENSITIVITY
PACKAGE
x
x
ORDERING INFORMATION
ORDERING TYPE
20PTxxA/20PTxxA-D
20PTxxAI/20PTxxAI-D
20PTxxH/20PTxxH-D
Note:
xx
=
voltage
MARKING
20PTxxA/20PTxxA-D
20PTxxAI/20PTxxAI-D
20PTxxH/20PTxxH-D
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D
2
PAK)
WEIGHT
2.0g
2.3g
2.0g
BASE Q,TY DELIVERY MODE
50
50
50
Tube
Tube
Tube
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Page 2 of 5
SEMICONDUCTOR
RoHS
20PT Series
RoHS
ORDERING INFORMATION SCHEME
20 PT 06
Current
20 = 20A,
I
T(RMS)
AI
D
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
H = TO-263 (D
2
PAK)
I
GT
Sensitivity
D = 4~10 mA
Blank = 3~25mA
Fig.1 Maximum average power dissipation
versus average on-state current.
P
(W)
16
14
12
10
8
6
4
2
0
0
2
4
360°
Fig.2 Average and D.C. on-state current
versus case temperature.
l
T(AV)
(A)
27
24
21
18
15
12
9
6
3
TO-220AB
insulated
α=180°
D.C.
TO-220AB
α=180°
TO-263
I
T(AV)
(A)
6
8
α
T
case
(°C)
0
25
50
75
100
125
10
12
0
Fig.3 Average and D.C. on-state current
versus ambient temperature.
(copper surface under tab: S=1cm
2
)
(D
2
PAK)
l
T(AV)
(A)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
K=[Z
th
/R
th
]
1.00
Z
th
(j-c)
D.C.
α=180°
0.10
Z
th
(j-a)
T
amb
(°C)
0
25
50
75
100
125
0.01
1E-3
1E-2
1E-1
t
P
(s)
1E+0
1E+1
1E+2 5E+2
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Page 3 of 5
SEMICONDUCTOR
RoHS
20PT Series
RoHS
Fig.5 Relative variation of gate trigger
current, holding current and latching
current and latching current versus
junction temperature.
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
l
GT
200
180
160
140
120
100
80
60
40
Fig.6 Surge peak on-state current versus
number of cycles.
I
TSM
(A)
t
p
=20ms
1.5
1.0
0.5
I
H
&
I
L
Non repetitive
T
j
initial = 25°C
Repetitive
T
case
= 100 °C
One cycle
T
J
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
20
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l
2
t
2000
T
j
initial = 25°C
Fig.8 On-state characteristics (maximum
values)
200
l
TSM
1000
100
T
j
max.:
V
to
= 0.77V
R
d
= 23mΩ
dl/dt
limitattion
T
j
max
l
2
t
10
T
j
= 25°C
100
10
0.01
t
p
(ms)
0.10
1.00
10.00
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
3.5
4.0
4.5
Fig.9 Thermal resistance junction to ambient
versus copper surface under tab
(epoxy printed circuit board Fr4,
copper thickness:35 µm)(D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
S(cm
2
)
20
24
28
32
36
40
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Page 4 of 5
SEMICONDUCTOR
RoHS
20PT Series
RoHS
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
TO-263(D
2
PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
4.83 (0.190)
4.06 (0.160)
RoHS
1.40 (0.055)
1.14 (0.045)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0
to
0.254 (0
to
0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
2
(A2)
(G)3
1(A1)
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Page 5 of 5
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