UNISONIC TECHNOLOGIES CO., LTD
2SA1013
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
PNP EPITAXIAL SILICON TRANSISTOR
The UTC
2SA1013
is a PNP epitaxial silicon transistor, it uses
UTC’s advanced technology to provide the customers with high BV
CEO
and high DC current gain, etc.
The UTC
2SA1013
is suitable for power switching and color TV
vertical deflection output, etc.
FEATURES
* High BV
CEO
* High DC current gain
* Large continuous collector current capability
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
2SA1013G-x-T9N-B
2SA1013L-x-T9N-K
2SA1013G-x-T9N-K
2SA1013L-x-AB3-R
Package
SOT-89
TO-92
TO-92
TO-92NL
TO-92NL
Pin assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Free
(1) R: Tape Reel, B: Tape Box
(2) AB3: SOT-89, T92: TO-92, T9N: TO-92NL
(3) refer to Classification of h
FE
(4) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R208-049.B
2SA1013
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-160
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-1
A
Base Current
I
B
-0.5
A
SOT-89
500
W
Collector Power Dissipation
P
C
TO-92/TO-92NL
900
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITIONS
V
CB
=-150V, I
E
=0
V
EB
=-6V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-5V, I
C
=-200mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-5mA
V
CE
=-5V, I
C
=-200mA
V
CB
=-10V, f=1MHz, I
E
=0
TYP MAX UNIT
-1.0 µA
-1.0 µA
-160
V
60
320
-1.5
V
-0.45
-0.75 V
15
50
MHz
35
pF
MIN
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF h
FE
RANK
RANGE
R
60~120
O
100~200
P
160~320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-049.B
2SA1013
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
Collector Current, -I
C
(µA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, -I
C
(mA)
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QW-R208-049.B
Embedded System
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