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HX6256XSRT

Description
Standard SRAM, 32KX8, 25ns, CMOS, CDFP36, 0.630 X 0.650 INCH, BOTTOM BRAZED, CERAMIC, FP-36
Categorystorage    storage   
File Size928KB,12 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric View All

HX6256XSRT Overview

Standard SRAM, 32KX8, 25ns, CMOS, CDFP36, 0.630 X 0.650 INCH, BOTTOM BRAZED, CERAMIC, FP-36

HX6256XSRT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHoneywell
Parts packaging codeDFP
package instructionDFP, FL36,.6,25
Contacts36
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-CDFP-F36
JESD-609 codee0
length16.51 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Encapsulate equivalent codeFL36,.6,25
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535V;38534K;883S
Maximum seat height4.2926 mm
Maximum standby current0.0005 A
Minimum standby current2.5 V
Maximum slew rate0.004 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal pitch0.635 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
total dose100k Rad(Si) V
width16.002 mm
HX6256
32K x 8 Static RAM
The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768
word x 8-bit static random access memory with industry-standard
functionality.
It
is
fabricated
with
Honeywell’s
radiation
hardened
technology, and is designed for use in systems operating in radiation
environments. The RAM operates over the full military temperature range
and requires only a single 5 V ± 10% power supply. The RAM is available
with either TTL or CMOS compatible I/O. Power consumption is typically
less than 15 mW/MHz in operation, and less than 5 mW when de-selected.
The RAM read operation is fully asynchronous, with an associated typical
access time of 17 ns at 5 V.
Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS)
technology is radiation hardened through the use of advanced and
proprietary design, layout, and process hardening techniques. The
RICMOS™ IV process is a 5-volt, SOI CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of
0.7 µm (0.6 µm effective gate length—L
eff
). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP
planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T)
memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low
collection volume SOI substrate provide improved dose rate hardening.
FEATURES
RADIATION
Fabricated with RICMOS™ IV Silicon on Insulator
(SOI) 0.7 µm Process (L
eff
= 0.6 µm)
Total Dose Hardness through 1x10 rad(SiO
2
)
Neutron Hardness through 1x10
14
6
OTHER
Listed On SMD#5962–95845
Fast Cycle Times
o
17 ns (Typical)
o
25 ns (-55 to 125°C) Read Write Cycle
Asynchronous Operation
o
CMOS or TTL Compatible I/O
Single 5 V
±
10% Power Supply
Packaging Options
o
28-Lead CFP (0.500 in. x 0.720 in.)
o
28-Lead DIP, MIL-STD-1835, CDIP2-T28
o
36-Lead CFP—Bottom Braze (0.630 x 0.650 in.)
o
36-Lead CFP—Top Braze (0.630 x 0.650 in.)
cm
-2
Dynamic and Static Transient Upset Hardness
9
through 1x10 rad(Si)/s
Dose Rate Survivability through 1x10
Soft Error Rate of <1x10
Geosynchronous Orbit
Immune from Latchup
-10
11
rad(Si)/s
upsets/bit-day in
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