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2SA1693L-P-T3P-T

Description
6 A, 80 V, PNP, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size128KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SA1693L-P-T3P-T Overview

6 A, 80 V, PNP, Si, POWER TRANSISTOR

2SA1693L-P-T3P-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SA1693
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
The UTC
2SA1693
is a silicon PNP epitaxial planar transistor, it
uses UTC’s advanced technology to provide the customers with high
DC current gain and high collector-base breakdown voltage, etc.
The UTC
2SA1693
is suitable for audio and general purpose, etc.
FEATURES
* High DC current gain
* High collector-base breakdown voltage
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
2SA1693L-x-T3P-T
2SA1693G-x-T3P-T
TO-3P
Note: Pin Assignment: B: Base C: Collector E: Emitter
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R214-017.b

2SA1693L-P-T3P-T Related Products

2SA1693L-P-T3P-T 2SA1693 2SA1693G-O-T3P-T 2SA1693G-P-T3P-T 2SA1693G-Y-T3P-T 2SA1693L-O-T3P-T 2SA1693L-Y-T3P-T
Description 6 A, 80 V, PNP, Si, POWER TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR POWER TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 Cel 150 °C 150 °C 150 °C 150 °C 150 °C
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-3P, 3 PIN
Reach Compliance Code unknown - unknow unknow unknow unknow compli
Maximum collector current (IC) 6 A - 6 A 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 80 V - 80 V 80 V 80 V 80 V 80 V
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 70 - 50 70 90 50 90
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP - PNP PNP PNP PNP PNP
Nominal transition frequency (fT) 20 MHz - 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
Base Number Matches 1 - 1 1 1 1 -
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