UNISONIC TECHNOLOGIES CO., LTD
2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
POWER NPN TRANSISTOR
DESCRIPTION
The UTC
2SD1782
is an NPN silicon transistor. it uses UTC’s
advanced technology to provide customers with high collector-emitter
breakdown voltage, low collector-emitter saturation voltage and high
DC current gain, etc.
FEATURES
* High collector-emitter breakdown voltage
* Low collector-emitter saturation voltage
* High DC current gain
ORDERING INFORMATION
Ordering Number
Lead Free
2SD1782L-x-AE3-R
Halogen Free
2SD1782G-x-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
(For SOT-23 Package)
D17
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
0.5
A
Collector Power Dissipation
P
C
0.2
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
TEST CONDITIONS
I
C
=50µA
I
C
=2mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
I
C
=500 mA, I
B
=50mA
V
CE
=3V, I
C
=100mA
V
CE
=10V, I
E
=-50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
MIN
80
80
5
TYP MAX UNIT
V
V
V
0.5
µA
0.5
µA
0.2 0.5
V
390
120
MHz
7.5
pF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
120
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120~270
R
180~390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-107.a
2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-107.a
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