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KM41C258Z-8

Description
Static Column DRAM, 256KX1, 80ns, CMOS, PZIP16, PLASTIC, ZIP-16
Categorystorage    storage   
File Size56KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41C258Z-8 Overview

Static Column DRAM, 256KX1, 80ns, CMOS, PZIP16, PLASTIC, ZIP-16

KM41C258Z-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeZIP
package instructionZIP, ZIP16,.1
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
access modeSTATIC COLUMN
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PZIP-T16
JESD-609 codee0
length20.575 mm
memory density262144 bit
Memory IC TypeSTATIC COLUMN DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals16
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeZIP
Encapsulate equivalent codeZIP16,.1
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle256
Maximum seat height8.26 mm
Maximum standby current0.001 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
width2.96 mm
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