KM44V4104ALLS-8 datasheet, PDF

KM44V4104ALLS-8: DescriptionEDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-24; Categorystorage storage; File Size536KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM44V4104ALLS-8 Overview

EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-24

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP24/26,.36
Contacts	24
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G24
JESD-609 code	e0
length	17.14 mm
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	24
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP24/26,.36
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.0002 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.62 mm

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