HM51W17405BLTS-8 datasheet, PDF

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HM51W17405BLTS-8: DescriptionEDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24; Categorystorage storage; File Size515KB，34 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM51W17405BLTS-8 Overview

EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24

HM51W17405BLTS-8 Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	26
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G24
length	17.14 mm
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	24
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX4
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.62 mm

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HM51W16405B Series

HM51W17405B Series

4,194,304-word

4-bit Dynamic Random Access Memory

ADE-203-543 (Z)

Preliminary

Rev. 0.0

Apr. 20, 1996

Description

The Hitachi HM51W16405B Series, HM51W17405B Series are CMOS dynamic RAMs organized

4,194,304-word

4-bit. They employ the most advanced CMOS technology for high performance and low

power. The HM51W16405B Series, HM51W17405B Series offer Extended Data Out (EDO) Page Mode

as a high speed access mode.

Features

•

Single 3.3 V (±0.3 V)

•

High speed



Access time: 60 ns/70 ns/80 ns (max)

•

Low power dissipation



Active mode : 360mW/324 mW/288 mW (max) (HM51W16405B Series)

: 396mW/360 mW/324 mW (max) (HM51W17405B Series)



Standby mode : 7.2 mW (max)

: 0.36 mW (max) (L-version)

•

EDO page mode capability

•

Long refresh period



4096 refresh cycles : 64 ms (HM51W16405B Series)

: 128 ms (L-version)



2048 refresh cycles : 32 ms (HM51W17405B Series)

: 128 ms (L-version)

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS

INSTRUMENTS.

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