CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 1/8
BTA1020K3
Features
•
Low V
CE(SAT)
, V
CE(SAT)
= -215mV (Typ.) @ I
C
/I
B
=-1A/-50mA
•
High breakdown voltage, BV
CEO
=-50V
•
Complementary to BTC2655K3
•
Pb-free lead plating and halogen-free package
Symbol
BTA1020K3
Outline
TO-92L
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTA1020K3-0-TB-G
BTA1020K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTA1020K3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, P
W
≤
10ms, Duty
≤
50%.
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 2/8
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
R
θJA
Tj
Tstg
Limits
-80
-50
-7
-2
-5
(Note)
900
139
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
-80
-50
-7
-
-
-
-
-
120
70
-
-
Typ.
-
-
-
-
-
-43
-215
-0.88
-
-
110
18
Max.
-
-
-
-100
-100
-80
-350
-1.2
240
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
-
-
MHz
pF
Test Conditions
I
C
=-100μA
I
C
=-10mA
I
E
=-10μA
V
CB
=-80V
V
EB
=-7V
I
C
=-100mA, I
B
=-5mA
I
C
=-1A, I
B
=-50mA
I
C
=-1A, I
B
=-50mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-1.5A
V
CE
=-2V, I
C
=-500mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
BTA1020K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.3
-IC, Collector Current(A)
-IC, Collector Current(A)
1.2
1mA
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 3/8
Emitter Grounded Output Characteristics
5mA
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
1
0.8
0.6
0.4
0.2
2.5mA
2mA
1.5mA
500uA
400uA
300uA
200uA
-IB=100uA
-IB=500uA
0
6
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
3
20mA
Emitter Grounded Output Characteristics
4
3.5
-IC, Collector Current(A)
3
2.5
2
1.5
1
0.5
0
6
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
-IB=5mA
25mA
20mA
15mA
10mA
50mA
-IC, Collector Current(A)
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
8mA
6mA
4mA
-IB=2mA
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
Current Gain---HFE
Current Gain---HFE
100
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
10
1
10
100
1000
-IC, Collector Current(mA)
10000
BTA1020K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
VCE=-5V
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 4/8
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage---(mV)
Current Gain---HFE
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
10
1
10
100
1000
-IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
Saturation Voltage vs Collector Current
1000
VCESAT@IC=50IB
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=100IB
Saturation Voltage vs Collector Current
10000
VBESAT@IC=10IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1000
-IC, Collector Current(mA)
10000
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
100
1
10
100
1000
-IC, Collector CurrentmA)
10000
BTA1020K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
On Voltage vs Collector Current
10000
VBEON@VCE=-2V
Spec. No. : C621K3
Issued Date : 2013.03.06
Revised Date : 2013.12.25
Page No. : 5/8
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---fT(MHz)
On Voltage---(mV)
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
VCE=-2V
1000
100
100
1
10
100
1000
-IC, Collector Current(mA)
10000
10
1
10
100
-IC, Collector Current(mA)
1000
Capacitance vs Reverse-biased Voltage
1000
Power Dissipation---PD(W)
1.2
Power Derating Curve
Capacitance---(pF)
0.9
Cib
100
0.6
0.3
Cob
10
0.1
1
10
-VR, Reverse-biased Voltage(V)
100
0
0
25
50
75
100
125 150
Ambient Temperature---TA(℃)
175
BTA1020K3
CYStek Product Specification
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