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Datasheet> All Categories > Discrete semiconductor> diode> 1N4006GP
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1N4006GP

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size106KB，3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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1N4006GP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

1N4006GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
JESD-609 codee0
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceTIN LEAD
Maximum time at peak reflow temperatureNOT SPECIFIED

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DIGITRON SEMICONDUCTORS
1N4001GP – 1N4007GP
MAXIMUM RATINGS
Characteristic
Maximum recurrent peak reverse voltage
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
Maximum RMS voltage
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
Maximum DC blocking voltage
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
Operating & Storage Temperature
Maximum thermal resistance, junction to lead :
Value
50
100
200
400
600
800
1000
Volts
35
70
140
280
420
560
700
Volts
50
100
200
400
600
800
1000
-55 to +150
20
°C
°C/W
Unit
Volts
GLASS PASSIVATED RECTIFIERS
ELECTRICAL CHARACTERISTICS
Average
forward
current
Part
number
I
F(AV)
T
A
= 75°C
Amps
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Peak forward
surge current
I
FSM
8.3ms half sine
Amps
30
30
30
30
30
30
30
Maximum
instantaneous
forward voltage
V
F
I
FM
= 1.0A,
T
J
= 25°C
(1)
Volts
1.1
1.1
1.1
1.1
1.1
1.1
1.1
T
J
= 25°C
µA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum DC reverse
current at rated DC
blocking voltage
I
R
T
J
= 125°C
µA
50
50
50
50
50
50
50
Typical junction
capacitance
C
J
Measured at 1MHz,
V
R
= 4.0V
pF
15
15
15
15
15
15
15
Note 1: Pulse test: Pulse width 300µsec, duty cycle 2%.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120705

1N4006GP Related Products

1N4006GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4007GP
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Digitron Digitron Digitron Digitron Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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