BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006
Product data sheet
1. Product profile
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I
Superior cross modulation performance during AGC
I
High forward transfer admittance
I
High forward transfer admittance to input capacitance ratio
1.3 Applications
I
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N
digital and analog television tuners
N
professional communication equipment
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
I
D
P
tot
|y
fs
|
C
iss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
T
sp
≤
107
°C
amplifier A; I
D
= 19 mA
amplifier B; I
D
= 13 mA
f = 100 MHz
amplifier A
amplifier B
C
rss
NF
Xmod
reverse transfer capacitance f = 100 MHz
noise figure
cross modulation
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
T
j
[1]
[2]
[2]
[2]
[1]
Conditions
Min
-
-
-
26
28
-
-
-
-
-
Typ
-
-
-
31
33
2.2
1.9
20
0.9
1.2
Max Unit
6
30
180
41
43
2.7
2.4
-
1.5
1.9
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
100
100
-
105
103
-
-
-
150
dBµV
dBµV
°C
junction temperature
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
1
2
3
G1B
AMP B
sym119
Simplified outline
6
5
4
Symbol
AMP A
G1A
DA
G2
S
DB
3. Ordering information
Table 3.
Ordering information
Package
Name
BF1210
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
BF1210_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
2 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
4. Marking
Table 4.
BF1210
Marking
Marking
*AB
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Conditions
Min
-
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
Per MOSFET
DC
-
-
-
T
sp
≤
107
°C
[1]
-
−65
-
T
sp
is the temperature at the soldering point of the source lead.
250
P
tot
(mW)
200
001aac193
150
100
50
0
0
50
100
150
T
sp
(˚C)
200
Fig 1. Power derating curve
BF1210_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
3 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
7. Static characteristics
Table 7.
Static characteristics
T
j
= 25
°
C.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
µA
amplifier A
amplifier B
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
µA
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
µA
V
G2-S
= 4 V
amplifier A; V
DS(A)
= 5 V; R
G1(A)
= 59 kΩ
amplifier B; V
DS(B)
= 5 V; R
G1(B)
= 150 kΩ
I
G1-S
gate1 cut-off current
V
G2-S
= 0 V; V
DS(A)
= V
DS(B)
= 0 V
amplifier A; V
G1-S(A)
= 5 V
amplifier B; V
G1-S(B)
= 5 V
I
G2-S
gate2 cut-off current
V
G2-S
= 4 V; V
DS(A)
= V
DS(B)
= 0 V;
V
G1-S(A)
= V
G1-S(B)
= 0 V
-
-
-
-
-
-
50
50
20
nA
nA
nA
[1]
Min
Typ Max Unit
Per MOSFET; unless otherwise specified
6
6
6
6
0.5
0.5
0.3
0.4
14
9
-
-
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
24
17
V
V
V
V
V
V
V
V
mA
mA
[1]
R
G1
connects gate1 to V
GG
= 5 V. See
Figure 32.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8.
Dynamic characteristics for amplifier A
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS(A)
= 5 V; I
D(A)
= 19 mA.
Symbol Parameter
|y
fs
|
C
iss(G1)
C
iss(G2)
C
oss
C
rss
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
Conditions
T
j
= 25
°C
f = 100 MHz
f = 100 MHz
f = 100 MHz
[1]
[1]
[1]
[1]
Min
26
-
-
-
-
Typ
31
2.2
3.0
0.9
20
Max
41
2.7
-
-
-
Unit
mS
pF
pF
pF
fF
reverse transfer capacitance f = 100 MHz
BF1210_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
4 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
Table 8.
Dynamic characteristics for amplifier A
…continued
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS(A)
= 5 V; I
D(A)
= 19 mA.
Symbol Parameter
G
tr
transducer power gain
Conditions
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Xmod
cross modulation
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1]
[2]
Calculated from S-parameters.
Measured in
Figure 32
test circuit.
[2]
[1]
Min
31
27
22
-
-
-
Typ
35
31
26
3
0.9
1.2
Max
39
35
30
-
1.5
1.9
Unit
dB
dB
dB
dB
dB
dB
90
-
-
100
-
90
99
105
-
-
-
-
dBµV
dBµV
dBµV
dBµV
BF1210_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
5 of 21
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