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1N6474E3

Description
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size345KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

1N6474E3 Overview

Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,

1N6474E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresTEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage33 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

1N6474E3 Preview

1N6469 thru 1N6476
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
SCOTTSDALE DIVISION
DESCRIPTION
This series of industry recognized voidless-hermetically-sealed Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in a surface mount MELF package configuration by adding
a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi
also offers numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“G” Package
FEATURES
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
I”
metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6469, MSP6476, etc.
Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
(see separate data sheet)
APPLICATIONS / BENEFITS
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM
) from 5.0 to
51.6 V
Available as 1500 W Peak Pulse Power (P
PP
)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55
o
C to +175
o
C
CASE: Hermetically sealed voidless hard glass
o
with Tungsten slugs
Peak Pulse Power at 25 C: 1500 Watts @ 10/1000 µs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
(also see Figures 1,2 and 4)
over copper
Impulse repetition rate (duty factor): 0.01%
MARKING: Body painted and part number, etc.
Forward Surge Current: 130 Amps@ 8.33 ms one-half
POLARITY: Cathode band
sine wave
Tape & Reel option: Standard per EIA-296
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
Weight: 1270 mg
Steady-State Power: 3.0 W @ T
A
= 25
o
C (see note
See package dimensions on last page
below and Figure 4)
Thermal Resistance @ 3/8 inch lead length: 50.0
o
C/W
Solder Temperatures: 260
o
C for 10 s (maximum)
NOTE:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
1N6461 – 1N6468
1N6469 – 1N6476
Copyright
2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6469 thru 1N6476
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
Volts
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
BREAKDOWN
CURRENT
I
(BR)
mAdc
50
50
10
10
5
1
1
1
WORKING
PEAK
VOLTAGE
V
WM
Vdc
5
6
12
15
24
30.5
40.3
51.6
MAX
LEAKAGE
CURRENT
I
D
µAdc
500
100
20
10
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
V
C
MAXIMUM
PEAK PULSE
CURRENT
I
PP
@8/20 µs
A(pk)
945
775
374
322
207
181
135
107
@10/1000 µs
A(pk)
167
137
66
57
36.5
32
24
19
MAXIMUM
TEMP.
COEF. OF
V
(BR)
%/ C
-.03, +0.04
0.06
0.085
0.085
.096
.098
.101
.103
o
WWW .
Microsemi
.C
OM
TYPE
@ 10/1000 µs
V(pk)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
1N6469
1N6470
1N6471
1N6472
1N6473
1N6474
1N6475
1N6476
Symbol
V
BR
V
WM
I
D
V
C
P
PP
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
GRAPHS
Pulse current (I
P
) in percent of I
PP
Peak Value
I
PP
1N6461 – 1N6468
1N6469 – 1N6476
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of peak
value (I
PP
).
FIG. 1 –
Non-repetive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
time (t) in milliseconds
FIG. 2
Pulse wave form for exponential surge
for 10/1000 µs
Copyright
2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6469 thru 1N6476
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
Peak Pulse Power (Ppp), Current (Ipp),
and DC Power in Percent of 25
o
C Rating
FIGURE 3
8/20 µs CURRENT IMPULSE WAVEFORM
T – Temperature –
o
C
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
PACKAGE G
Note: Package G lead dimension diameter is 0.040 inch nominal with –.003 +.002 inch tolerance
1N6461 – 1N6468
1N6469 – 1N6476
Copyright
2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3

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Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
Other features TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE HIGH RELIABILITY TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Minimum breakdown voltage 33 V 13.6 V 5.6 V 6.5 V 16.4 V 27 V 54 V 13.6 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Maximum non-repetitive peak reverse power dissipation 1500 W 1500 W 1500 W 1500 W 1500 W 1500 W 1500 W 1500 W
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -65 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 3 W 3 W 3 W 3 W 3 W 3 W 3 W 3 W
surface mount NO NO NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Maximum repetitive peak reverse voltage - 12 V 5 V 6 V 15 V - - 12 V
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