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MTN002N05Y3

Description
50V N-CHANNEL Enhancement Mode MOSFET
File Size296KB,8 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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MTN002N05Y3 Overview

50V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
50V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C834Y3
Issued Date : 2012.06.25
Revised Date :
Page No. : 1/8
MTN002N05Y3
Features
Simple drive requirement
Small package outline
Pb-free package
BV
DSS
I
D
R
DSON
@V
GS
=4.5V, I
D
=220mA
R
DSON
@V
GS
=2.5V,I
D
=220mA
R
DSON
@V
GS
=1.8V,I
D
=100mA
50V
250mA
1.2Ω(typ)
1.7Ω(typ)
3.6Ω(typ)
Symbol
MTN002N05Y3
Outline
SOT-723
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=4.5V
Continuous Drain Current @ T
A
=85°C, V
GS
=4.5V
Pulsed Drain Current
(Notes 1, 2)
T
A
=25℃
Maximum Power Dissipation
(Note 3)
Symbol
V
DS
V
GS
(Note 3)
(Note 3)
I
D
I
DM
P
D
Limits
50
±20
250
180
1
150
80
1500
(Note 4)
-55~+150
Unit
V
mA
A
mW
V
°C
T
A
=85℃
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on FR-4 board.
4.
Human body model, 1.5kΩ in series with 100pF.
Tj, Tstg
MTN002N05Y3
CYStek Product Specification
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