DIGITRON SEMICONDUCTORS
2N6068, A, B-2N6075,A, B
SENSITIVE GATE TRIACS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Repetitive
2N6068, A,
2N6069, A,
2N6070, A,
2N6071, A,
2N6072, A,
2N6073, A,
2N6074, A,
2N6075, A,
peak off-state voltage
B
B
B
B
B
B
B
B
(1)
Symbol
(T
J
= 110°C)
Value
25
50
100
200
300
400
500
600
4.0
30
3.6
10
0.5
5.0
-40 to 110
-40 to 150
8.0
Unit
V
DRM
Volts
On-state current RMS
(T
C
= 85°C)
Peak surge current
(one full cycle, 60Hz, T
J
= -40 to 110°C)
Circuit fusing considerations
(T
J
= -40 to 110°C, t = 1.0 to 8.3ms)
Peak gate power
Average gate power
Peak gate voltage
Operating junction temperature
Storage temperature
Mounting torque (6-32) screw
(2)
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
T
J
T
stg
-
Amp
Amp
A
2
s
Watts
Watt
Volts
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, case to ambient
Symbol
R
ӨJC
R
ӨCA
Max
3.5
60
Unit
°C/W
°C/W
NOTE 1: Ratings apply for gate open conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking
voltage.
NOTE 2: Torque rating applies with use of torque washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact
pad are common.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
Rated V
DRM
@ T
J
= 110°C, gate open
On-state voltage
(either direction)
I
TM
= 6.0A peak
Peak gate trigger voltage
Main terminal voltage = 12Vdc, R
L
= 100ohms, T
J
= -40°C
MT2(+), G(+):MT2(-), G(-) All types
MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B
Main terminal voltage = rated V
DRM
, R
L
= 10k ohms, T
J
= 110°C
MT2(+), G(+):MT2(-), G(-) All types
MT2(+), G(-): MT2(-), G(+) 2N6068A, B thru 2N6075A, B
Holding current
(either direction)
Main terminal voltage = 12Vdc, gate open, T
J
= -40°C
Initiating current = 1.0Adc
2N6068 thru 2N6075
2N6068A, B thru 2N6075A, B
Initiating current = 1.0Adc, T
J
= 25°C
2N6068 thru 2N6075
2N6068A, B thru 2N6075A, B
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
V
TM
Min
-
-
Typ
-
-
Max
2.0
2.0
Unit
mA
Volts
V
GTM
-
-
0.2
0.2
1.4
1.4
-
-
2.5
2.5
-
-
Volts
I
H
-
-
-
-
-
-
-
-
70
30
30
15
mA
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
DIGITRON SEMICONDUCTORS
2N6068, A, B-2N6075,A, B
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Turn-on time
(either direction)
I
TM
= 14Adc, I
GT
= 100mAdc)
Blocking voltage application rate at commutation
@ V
DRM
, T
J
= 85°C, gate open
Symbol
t
on
dv/dt
Min
-
-
Typ
1.5
5.0
Quadrant
Type
I
GTM
@ T
J
25°C
-40°C
Peak gate trigger current
Main terminal voltage = 12Vdc, R
L
= 100ohms
Maximum value
2N6068A-2N6075A
25°C
-40°C
2N6068B-2N6075B
25°C
-40°C
I
mA
30
60
5.0
20
3.0
15
II
mA
-
-
5.0
20
3.0
15
III
mA
30
60
5.0
20
3.0
15
IV
mA
-
-
10
30
5.0
20
Max
-
-
Unit
µs
V/µs
SENSITIVE GATE TRIACS
2N6068-2N6075
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-126
Body painted, alpha-numeric
See below
TO-126
Inches
Min
Max
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.125
0.091
0.097
0.050
0.095
0.015
0.025
0.595
0.655
3° TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
-
Millimeters
Min
Max
10.80
11.050
7.490
7.750
2.410
2.670
0.510
0.660
2.920
3.180
2.310
2.460
1.270
2.410
0.380
0.640
15.110
16.640
3° TYP
3.760
4.010
1.140
1.400
0.640
0.890
3.680
3.940
1.020
-
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
Embedded System
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