DIGITRON SEMICONDUCTORS
2N681-2N692, 2N5204-2N5207
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
RMS on-state current
Average on-state current
@ T
C
Peak one cycle surge @ 50 Hz
Peak one cycle surge @ 60 Hz
Fusing @ 50 Hz
Fusing @ 60 Hz
Gate current to trigger
Typical critical dv/dt exponential to V
DRM
Critical rate of rise
Typical junction temperature
Symbol
I
T(RMS)
I
T(AV)
T
C
I
TSM
I
2
t
I
GT
dv/dt
di/dt
T
J
2N681-2N692
25
16
-65 to +65
145
150
103
94
40
-
75-100
-65 to 125
2N5204-2N5207
35
22
-40 to +40
285
300
410
375
40
100
100
-40 to 125
Unit
A
A
°C
A
A
A
2
s
mA
V/µs
A/µs
°C
VOLTAGE RATINGS (Applied gate voltage zero or negative)
Part Number
V
RRM
, V
DRM
Maximum repetitive peak reverse and
off-state voltage
(V)
T
J
= -65 to +125°C
25
50
100
200
300
400
500
600
700
800
T
J
= -40 to 125°C
600
800
1000
1200
V
RSM
Maximum non-repetitive peak reverse voltage
t
p
≤
5 ms
(V)
T
J
= -65 to +125°C
35
75
150
300
400
500
600
720
840
960
T
J
= -40 to 125°C
720
960
1200
1440
2N681
2N682
2N683
2N685
2N687
2N688
2N689
2N690
2N691
2N692
2N5204
2N5205
2N5206
2N5207
ELECTRICAL CHARACTERISTICS
Symbol
I
T(RMS)
I
T(AV)
Characteristics
Maximum RMS on-state current
Maximum average on-state
current
@ T
C
=
2N681-2N692
25
16
-65 to +65
145
I
TSM
Maximum peak one cycle,
non-repetitive surge current
150
170
180
I
2
t
I
2
t
Maximum I
2
t capability, for fusing
Maximum I
2
t capability for
individual device fusing
103
94
145
135
phone +1.908.245-7200
fax +1.908.245-0555
2N5204-
2N5207
35
22
-40 to +40
285
300
340
355
410
375
580
530
Units
A
A
°C
Conditions
180° half sine wave conduction
50 Hz half cycle sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
V
RRM
applied following
surge
Same conditions as above
except with V
RRM
applied
following
surge = 0
A
60 Hz half cycle sine wave
or 5 ms rectangular pulse
50 Hz half cycle sine wave
or 6 ms rectangular pulse
60 Hz half cycle sine wave
or 5 ms rectangular pulse
A
2
s
A
2
s
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Rated V
RRM
applied
following surge, initial
T
J
= 125°C
V
RRM
= 0 following
surge, initial
T
J
= 125°C
144 Market Street
Kenilworth NJ 07033 USA
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
2N681-2N692, 2N5204-2N5207
ELECTRICAL CHARACTERISTICS
Symbol
I
2
√t
V
TM
I
H
BLOCKING
dv/dt
Characteristics
Maximum I
2
√t
capability for
individual device fusing
(1)
Maximum peak on-state voltage
Maximum holding current
Minimum critical rate of rise of
off-state voltage
Maximum reverse and off-state
current
V
RRM
& V
DRM
=
25 to 150V
200 & 250V
300V
I
R
(-)
SILICON CONTROLLED RECTIFIER
2N681-
2N692
1450
2
20 @ 25°C
100 typical
250 typical
I
R(AV)
& I
D(AV)
(average values)
2N5204-
2N5207
5800
2.3
200 @-40°C
Units
A
2
√s
V
mA
V/µs
Conditions
t = 0.1 to 10ms initial T
J
≤
125°C,
V
RRM
following surge = 0
T
J
= 25°C, I
T(AV)
= 16A(50A peak) –
2N681
I
T(AV)
= 22A (70A) peak – 2N5204
Anode supply = 24V, initial I
T
= 1.0A
T
J
= 125°C exponential to 100% rated V
DRM
T
J
= 125°C exponential to 67% rated V
DRM
100
250
I
RM
& I
DM
(peak values)
-
6.5
6.0
5.0
4.0
3.0
2.5
2.25
2.0
-
-
-
-
-
-
-
-
3.3
-
2.5
2.0
1.7
T
C
= 25°C, V
DM
= rated V
DRM
, I
TM
= 10A dc
resistive circuit. Gate pulse: 10 V,
40Ω source, t
p
= 6µs, t
r
= 0.1µs
T
C
= 125°C, V
DM
= rated V
DRM
, I
TM
= 2 x
di/dt, gate pulse: 20V, 15
Ω,
t
p
= 6µs,
t
r
= 0.1 µs maximum
T
C
= 125°C, V
DM
= 600V, I
TM
= 200A @
400Hz max. Gate pulse: 20V, 15Ω,
t
p
= 6µs, t
r
= 0.1µs max.
W
W
A
V
V
T
C
= min rated value. Max. required gate
trigger current is the lowest value which
will trigger all units with 6V anode to
cathode
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C, 6V anode to cathode
t
p
≤
5ms – 2N681
t
p
≤
500µs – 2N5204
mA
T
J
= 125°C, gate open circuited
& I
D
(-)
400V
500V
600V
700V
800V
1000V
1200V
SWITCHING
t
d
Typical delay time
Maximum non-repetitive rate of
rise of turned-on current
V
DM
= 25 to 600 V
di/dt
V
DM
= 700 to 800 V
1
1
µs
100
75
-
-
-
100
A/µs
TRIGGERING
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate
current
Maximum peak positive gate
voltage
Maximum peak negative gate
voltage
5
0.5
2
10
5
60
0.5
2
-
5
I
GT
Maximum required DC gate
current to trigger
80
40
18.5
80
40
20
30
mA
Typical DC gate current to
trigger
Note 1: I
2
t for time t
x
≈
I
2
√t ● √t
x
30
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
2N681-2N692, 2N5204-2N5207
ELECTRICAL CHARACTERISTICS
Symbol
Characteristics
Maximum required DC gate
voltage to trigger
Typical DC gate voltage to
trigger
V
GD
Maximum DC gate voltage not
to trigger
2N681-2N692
3
2
1.5
2N5204-
2N5207
3
2
1.5
V
Units
Conditions
T
C
= -65°C. Max. required gate trigger
voltage is the lowest value which will
trigger all units with 6V anode to cathode
T
C
= 25°C
T
C
= 25°C 6V anode to cathode
T
C
= 125°C. Max. gate voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
DRM
anode
to cathode
SILICON CONTROLLED RECTIFIER
V
GT
0.25
0.25
V
THERMAL –MECHANICAL CHARACTERISTICS
Symbol
T
J
T
stg
R
thJC
R
thCS
Characteristics
Operating junction temperature
range
Storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance, case to sink
2N681-2N692
-65 to 125
-65 to 125
1.5
0.35
2N5204-
2N5207
-40 to 125
-40 to 125
Units
°C
°C
°C/W
°C/W
Conditions
1.5
0.35
DC operation
Mounting surface smooth, flat and greased
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-48
Alpha-numeric
See below
TO-48
Inches
Min
Max
0.604
0.614
0.551
0.559
1.050
1.190
0.135
0.160
-
0.265
0.420
0.455
0.620
0.670
0.300
0.350
0.055
0.085
0.501
0.505
Millimeters
Min
Max
15.340
15.600
14.000
14.200
2.670
30.230
3.430
4.060
-
6.730
10.670
11.560
15.750
17.020
7.620
8.890
1.400
2.160
12.730
12.830
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
2N681-2N692, 2N5204-2N5207
SILICON CONTROLLED RECTIFIER
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
2N681-2N692, 2N5204-2N5207
SILICON CONTROLLED RECTIFIER
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
PCB Design
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