DIGITRON SEMICONDUCTORS
2N877-2N881, 2N885-2N889
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Peak forward blocking voltage
Part number
V
FXM
T
J
= -65° to 125°C
R
GK
= 1000 ohms maximum
2N877, 2N885
2N878, 2N886
2N879, 2N887
2N880, 2N888
2N881, 2N889
Rating
Peak forward voltage
RMS on-state current
Peak one cycle surge (non-repetitive) on-state current
Peak forward gate power dissipation
Average forward gate power dissipation
Peak gate voltage, forward and reverse
Storage temperature
Operating temperature
30
60
100
150
200
Working and repetitive peak
reverse voltage
V
ROM
(wkg) and V
ROM
(rep)
T
J
= -65° to 150°C
30
60
100
150
200
Symbol
V
F(pk)
I
T(RMS)
I
FM
P
GM
P
G(AV)
V
GFM
, V
GRM
T
stg
T
J
Value
300
0.5
7.0
0.1
0.01
6.0
-65 to 150
-65 to 150
Non-repetitive peak reverse voltage
V
ROM
(non-rep) < 5 milliseconds
T
J
= -65° to 125°C
45
90
130
200
275
Unit
V
A
A
W
W
V
°C
°C
V
V
V
V
V
Units
ELECTRICAL CHARACTERISTICS
Characteristic
Forward blocking current
2N877-2N881
2N885-2N889
Reverse blocking current
2N877-2N881
I
RX
2N885-2N889
Reverse gate current
Peak on-state voltage
Holding current
2N877-2N881
2N885-2N889
Critical rate of rise of applied forward voltage
Turn-on time
(Delay time + rise time)
Circuit commutated turn-off time (all types)
0.4
I
H
dv/dt
t
d
+ t
r
0.4
-
1.7
1.1
40
5.0
3.0
-
-
-
t
off
-
15
µs
mAdc
T
J
= 125°C, R
GK
= 1000ohms, V
FXM
= rated
V
FXM
T
J
= 25°C, V
FX
= rated V
FXM
, I
FM
= 1A, gate
supply: 6V, 300ohms
T
J
= 125°C, R
GK
= 1000ohms, I
FM
= 1A,
I
R
(recovery) = 1A, reapplied V
FXM
= rated,
rate of rise of reapplied forward blocking
voltage = 20V/µs
I
GRM
V
FM
-
-
-
-
-
-
0.1
10
0.1
10
1
1.3
10
100
1
20
10
1.9
µAdc
V
µAdc
-
I
FX
-
-
-
0.03
10
0.03
10
10
100
1
20
µAdc
Symbol
Min
Typ
Max
Units
Test Condition
V
FX
= rated V
FXM
, R
GK
= 1000ohms
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
RX
= rated V
ROM
(rep)
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
GRM
= 2V, T
J
= 25°C
T
J
= 25°C, I
FX
= 1A, single, half sinewave
pulse, 2.0ms wide max.
T
J
= 25°C, R
GK
= 1000ohms, V
FX
= 24V dc
V/µs
µs
-
1.0
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130123
DIGITRON SEMICONDUCTORS
2N877-2N881, 2N885-2N889
ELECTRICAL CHARACTERISTICS
Characteristic
Gate trigger current
2N877-2N881
2N885-2N889
Gate trigger voltage
2N877-2N881
2N885-2N889
All types
V
GT
0.4
0.44
0.05
SILICON CONTROLLED RECTIFIER
Symbol
Min
Typ
Max
Units
Test Condition
V
FX
= 6Vdc, R
GK
= 1000ohms,
R
L
= 100 ohms max.
I
GT
-
-
40
10
200
20
µAdc
T
J
= 25°C
T
J
= 25°C
V
FX
= 6Vdc, R
GK
= 1000ohms,
R
L
= 100ohms max.
0.5
0.5
-
0.8
0.6
-
Vdc
T
J
= 25°C
T
J
= 25°C
V
FX
= rated V
FXM
, R
GK
= 1000ohms,
T
J
= 125°C
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-18
Alpha-numeric
See below
TO-18
Inches
Min
Max
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
-
0.030
0.016
0.019
0.100 BSC
0.036
0.046
0.028
0.048
0.500
-
0.250
-
45°C BSC
0.050 BSC
-
0.050
Millimeters
Min
Max
5.310
5.840
4.520
4.950
4.320
5.330
0.406
0.533
-
0.762
0.406
0.483
2.540 BSC
0.914
1.170
0.711
1.220
12.700
-
6.350
-
45° BSC
1.270 BSC
-
1.270
A
B
C
D
E
F
G
H
J
K
L
M
N
P
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130123
Embedded System
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