UNISONIC TECHNOLOGIES CO., LTD
U74AHC2G125
DUAL BUFFER/LINE DRIVER;
3-STATE
DESCRIPTION
CMOS IC
The
U74AHC2G125
is a high speed, Si-gate CMOS device.
The
U74AHC2G125
provides a dual non-inverting buffer/line
drivers with 3-state output. The 3-state output is controlled by the
output enable input ( nOE ). A HIGH at nOE causes the output
to assume a high-impedance OFF-state.
TSSOP-8
FEATURES
* Symmetrical output impedance
* High noise immunity
* Low power dissipation
* Balanced propagation delays
* Multiple package options
* Specified from -40 °C to +125 °C
ORDERING INFORMATION
Ordering Number
Lead Free
U74AHC2G125L-P08-T
U74AHC2G125L-P08-R
Halogen Free
U74AHC2G125G-P08-T
U74AHC2G125G-P08-R
Package
TSSOP-8
TSSOP-8
Packing
Tube
Tape Reel
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QW-R502-A57.A
U74AHC2G125
PIN CONFIGURATION
CMOS IC
PIN CONFIGURATION
PIN No
1, 7
2. 5
4
6, 3
8
SYMBOL
1OE , 2OE
1A, 2A
GND
1Y, 2Y
V
CC
Data input
Ground (0V)
Data output
Supply voltage
DESCRIPTION
Output enable input (active LOW)
FUNCTIONAL DIAGRAM
FUNCTION TABLE
Control
nOE
Input
nA
Output
nY
L
L
L
L
H
H
H
X
Z
H=HIGH voltage level; L=LOW voltage level; X=don’t care; Z=high-impedance OFF-state
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QW-R502-A57.A
U74AHC2G125
ABSOLUTE MAXIMUM RATING
PARAMETER
CMOS IC
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Supply Voltage
V
CC
-0.5
+7.0
V
Input Voltage
V
I
-0.5
+7.0
V
Input Clamping Current
I
IK
V
I
<-0.5V
-20
mA
Output Clamping Current
I
OK
V
O
<-0.5V or V
O
>V
CC
+0.5V
±20
mA
Output Current
I
O
V
O
=-0.5V ~ (V
CC
+0.5V)
±25
mA
Supply Current
I
CC
75
mA
Ground Current
I
GND
-75
mA
Power Dissipation
P
D
300 mW
Storage Temperature
T
STG
-65
+150 °C
Note: The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
∆t/∆V
TEST CONDITIONS
MIN
2
0
0
TYP
5
MAX UNIT
5.5
V
5.5
V
V
CC
V
100
ns/V
20
+125 °C
PARAMETER
Supply Voltage
Input Voltage
Output Voltage
Input Transition Rise and Fall Rate
V
CC
=3.3V±0.3V
V
CC
=5V±0.5V
-40
+25
Ambient Temperature
T
A
Note: Voltages are referenced to GND (ground=0V).
ELECTRICAL CHARACTERISTICS
(T
A
=25°C , unless otherwise specified)
PARAMETER
SYMBOL
V
IH
TEST CONDITIONS
V
CC
=2V
V
CC
=3V
V
CC
=5.5V
V
CC
=2V
V
CC
=3V
V
CC
=5.5V
V
CC
=2V, I
OH
=-50μA
V
CC
=3V, I
OH
=-50μA
V
CC
=4.5V, I
OH
=-50μA
V
CC
=3V, I
OH
=-4mA
V
CC
=4.5V, I
OH
=-8mA
V
CC
=2V, I
OL
=50μA
V
CC
=3V, I
OL
=50μA
V
CC
=4.5V, I
OL
=50μA
V
CC
=3V, I
OL
=4mA
V
CC
=4.5V, I
OL
=8mA
V
CC
=0 to 5.5V, V
I
= 5.5V or GND
V
CC
=5.5V, V
I
= V
CC
or GND
V
CC
=5.5V, V
I
=V
CC
or GND, I
O
=0
MIN
1.5
2.1
3.85
TYP
MAX UNIT
V
0.5
0.9
1.65
1.9
2.9
4.4
2.58
3.94
2.0
3.0
4.5
High-level Input Voltage
Low-level Input Voltage
V
IL
V
Output Voltage High-level
V
OH
V
Output Voltage Low-level
V
OL
0
0
0
Input Leakage Current
OFF-state output current
Quiescent Supply Current
I
I
I
OZ
I
CC
0.1
0.1
0.1
0.36
0.36
±0.1
0.25
1
V
μA
μA
μA
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U74AHC2G125
SWITCHING CHARACTERISTICS
(t
r
= t
f
≤3ns,
T
A
=25°C, unless otherwise specified)
PARAMETER
Propagation delay from input
(nA) to output (nY)
SYMBOL
t
PLH
/ t
PHL
TEST CONDITIONS
C
L
=15pF
V
CC
=3~3.6V
C
L
=50pF
C
L
=15pF
V
CC
=4.5~5.5V
C
L
=50pF
C
L
=15pF
V
CC
=3~3.6V
C
L
=50pF
C
L
=15pF
V
CC
=4.5~5.5V
C
L
=50pF
C
L
=15pF
V
CC
=3~3.6V
C
L
=50pF
C
L
=15pF
V
CC
=4.5~5.5V
C
L
=50pF
MIN
TYP
4.7
6.6
3.4
4.8
5.0
6.9
3.6
4.9
6.0
8.3
4.1
5.7
CMOS IC
Enable time from nOE to nY
t
PZL
/ t
PZH
Disable time from nOE to nY
t
PLZ
/ t
PHZ
MAX UNIT
8.0
ns
11.5
ns
5.5
ns
7.5
ns
8.0
ns
11.5
ns
5.1
ns
7.5
ns
9.7
ns
13.2
ns
6.8
ns
8.8
ns
CAPACITIVE CHARACTERISTICS
(T
A
=25°C , unless otherwise specified)
SYMBOL
C
I
C
PD
TEST CONDITIONS
per buffer; C
L
=50pF; f
i
=1MHz;
V
I
=GND to V
CC
MIN
TYP
1.5
9
MAX UNIT
10
pF
pF
PARAMETER
Input Capacitance
Power Dissipation Capacitance
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U74AHC2G125
TEST CIRCUIT AND WAVEFORMS
CMOS IC
t
PHL
, t
PLH
open
S1 position
t
PZH
, t
PHZ
GND
t
PZL
, t
PLZ
V
CC
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QW-R502-A57.A
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