DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 110°C)
BTC08-100(A)
BTC08-200(A)
BTC08-400(A)
BTC08-600(A)
RMS on-state current
(T
C
= 72°C)
Peak surge current
(1 cycle, 50Hz, T
J
= -40 to +110°C)
Circuit fusing considerations
(T
J
= -40 to 110°C , t = 10ms)
Peak gate power
(pulse width = 10µs)
Average gate power
(T
C
= 80°C, t = 10ms)
Peak gate current
(pulse width = 10µs)
Operating junction temperature range
Storage temperature range
I
TM
= 12A, I
G
= 200mA
Symbol
Value
Unit
V
DRM
100
200
400
600
8.0
60
18
10
0.5
3.5
-40 to +110
-40 to +150
10
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
di/dt
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
A/µs
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
2.2
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(Rated V
DRM
@ T
J
= 110°C, gate open)
Peak on-state voltage
(either direction)
(I
TM
= 10A peak)
Gate trigger voltage
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω)
All types, all quadrants
(main terminal voltage = rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
All types, all quadrants
Holding current
(either direction)
(main terminal source voltage= 12V, gate open, initiating current = 1.0A)
T
C
= -40°C
T
C
= 25°C
Latching current
(main terminal source voltage = 24V, gate trigger source = 15V, 100Ω)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
1.5
Max
1.0
1.75
Unit
mA
Volts
V
GTM
-
0.2
-
-
2.5
-
Volts
I
H
-
-
-
-
100
45
mA
I
L
-
-
-
-
-
-
100
100
200
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
Characteristic
Critical rate of rise of off-state voltage
(Rated V
DRM
, exponential voltage rise, gate open, T
C
= 100°C)
Blocking voltage application rate at commutation
(@ V
DRM
, gate open commutating di/dt = 3.2A/ms)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
dv/dt
dv/dt(c)
Min
50
4
Typ.
100
-
Max
-
-
Unit
V/µs
V/µs
QUADRANT
Characteristic
Peak gate trigger current
(main terminal voltage = 12V, R
L
= 100Ω)
BTC08 SERIES, T
J
= 25°C
BTC08 SERIES, T
J
= -40°C
BTC08-()A SERIES, T
J
= 25°C
BTC08-()A SERIES, T
J
= -40°C
Symbol
I
mA
II
mA
III
mA
IV
mA
I
GTM
50
100
50
100
50
100
50
100
50
100
50
100
-
-
100
200
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
Embedded System
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