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P6SMB150CATR13LEADFREE

Description
Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size68KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
Download Datasheet Parametric View All

P6SMB150CATR13LEADFREE Overview

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Bidirectional, 1 Element, Silicon,

P6SMB150CATR13LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage157.5 V
Minimum breakdown voltage142.5 V
Breakdown voltage nominal value150 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage128 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature10

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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