1N5555E3TR datasheet, PDF - EEWORLD Datasheet

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1N5555E3TR: DescriptionTrans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN; CategoryDiscrete semiconductor diode; File Size156KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1N5555E3TR Overview

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN

1N5555E3TR Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	O-MALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	33 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-202AA
JESD-30 code	O-MALF-W2
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Maximum repetitive peak reverse voltage	30.5 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

1N5555E3TR Preview

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

1500 WATT UNIDIRECTIONAL

TRANSIENT VOLTAGE SUPPESSOR

Qualified per MIL-PRF-19500/500

DEVICES

LEVELS

1N5555

1N5557

1N5556

1N5558

JAN

JANTX

JANTXV

DESCRIPTION

This Transient Voltage Suppressor (TVS) series for 1N5555 thru 1N5558 are JEDEC

registered selections for unidirectional devices. All have the same high Peak Pulse

Power rating of 1500 W with extremely fast response times. They are also available in

military qualified selections as described in the Features section herein. They are most

often used for protecting against transients from inductive switching environments,

induced RF effects, or induced secondary lightning effects as found in lower surge levels

of IEC61000-4-5. They are also very successful in protecting airborne avionics and

electrical systems. Since their response time is virtually instantaneous, they can also

protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

FEATURES

Unidirectional TVS series for thru-hole mounting

Working voltage (V

) range 30.5 V to 175 V

Hermetic sealed DO-13 metal package

JAN/TX/TXV military qualifications also available per MIL-PRF-19500/500 by

adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5555, etc.

For bidirectional TVS in the same DO-13 package, see separate data sheet for the

1N6036 – 1N6072A series (also military qualified)

Surface mount equivalent packages also available from the SMCJ5.0 -

SMCJ170CA or SMCG5.0 – SMCG170C series in separate data sheet (consult

factory for other surface mount options)

Plastic axial-leaded equivalents available from the 1N6267 – 1N6303A series in

separate data sheet

DO-13 (DO-202AA)

T4-LDS-0094 Rev. 2 (101572)

Page 1 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

APPLICATIONS / BENEFITS

Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)

Clamps transient in less than 100 pico seconds

Protection from switching transients and induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: 1N5555 to 1N5558

Class 2 & 3: 1N5555 to 1N5557

Class 4: 1N5555 to 1N5556

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: 1N5555 to 1N5557

Class 2: 1N5555 to 1N5557

Inherently radiation hard as described in Microsemi MicroNote 050

MAXIMUM RATINGS

1500 Watts for 10/1000

μs

with repetition rate of 0.01% or less* at lead temperature (T

) 25

C (see Figs 1, 2, & 4)

Operating & Storage Temperatures: -65

to +175

THERMAL RESISTANCE: 50

C/W junction to lead at 0.375 inches (10 mm) from body or 110

C/W junction to

ambient when mounted on FR4 PC board with 4 mm

copper pads (1oz) and track width 1 mm, length 25 mm

DC Power Dissipation*: 1 Watt at T

= +25

C 3/8” (10 mm) from body (see derating in Fig 3)

Forward surge current: 200 Amps for 8.3ms half-sine wave at T

= +25

Solder Temperatures: 260

C for 10 s (maximum)

MECHANICAL AND PACKAGING

CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass

FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026

POLARITY: Cathode connected to case and polarity indicated by diode symbol

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated

standoff voltage

) except for transients that briefly drive the device into avalanche breakdown (V

to V

region).

T4-LDS-0094 Rev. 2 (101572)

Page 2 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS

Minimum

JEDEC

Breakdown

Type

Voltage

Number

(BR)

@ I

(BR)

(Notes 1&2)

1N5555

1N5556

1N5557

1N5558

33.0

43.7

54.0

191.0

Test

Current

(BR)

Rated

Standoff

Voltage

30.5

40.3

49.0

175.0

Maximum

(RMS)

Reverse

Voltage

WM(RMS)

21.5

28.5

34.5

124.0

Maximum

Standby

Current

@ V

μA

Maximum

Peak

Reverse

Voltage

@ I

47.5

63.5

78.5

265.0

Maximum

Peak Pulse

Current

5.7

Maximum

Temperature

Coefficient of

(BR)

V(BR)

@ 1.0 mA

+.093

+.094

+.096

+.100

1.0

NOTE 1:

A TVS is normally selected according to the rated “Standoff Voltage” V

that should be equal to or

greater than the dc or continuous peak operating voltage level.

NOTE 2:

Also available in military qualified types with a JAN, JANTX, or JANTXV prefix

SYMBOLS & DEFINITIONS

Symbol

(BR)

Definition

Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1

above.)

Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25

Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when

subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the

combination of voltage rise due to both the series resistance and thermal rise and positive

temperature coefficient (α

V(BR)

)

Peak Pulse Current: The peak current during the impulse (See Figure 2)

Peak Pulse Power: The pulse power as determined by the product of V

and I

Standby Current: The current at the standoff voltage (V

)

Breakdown Current: The current used for measuring Breakdown Voltage (V

(BR)

)

(BR)

T4-LDS-0094 Rev. 2 (101572)

Page 3 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

GRAPHS

100

Peak Pulse Power (P

) in kW

Exponential wave-form

(See

FIG. 2)

(See

FIG. 2)

Square-wave pulse

Pulse current (I

) in percent of I

Peak Value

1.0

Pulse time duration (tp) is

defined as that point

where I

decays to 50% of

peak value (I

0.1Kw

100ns

1μs

10μs

100μs

1ms

10ms

Pulse Time (tp )

FIG. 1 –

Non-repetitive peak pulse power rating curve

NOTE: Peak power defined as peak voltage times peak current

Time (t) in milliseconds

FIG. 2

Pulse wave form for exponential surge

Steady-state power dissipation (watts)

– lead Temperature

FIG. 3

Steady-state power derating curve

Peak Pulse Power (P

) or current I (surge)

in percent of 25

C rating

Ambient Temperature

FIG. 4

Derating Curve

T4-LDS-0094 Rev. 2 (101572)

Page 4 of 5

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The major diameter is essentially constant along its length.

4. Within this zone, diameter may vary to allow for lead finishes

and irregularities.

5. Dimension to allow for pinch or seal deformation anywhere

along tubulation.

6. Lead 1 (cathode) shall be electrically connected to the case.

7. In accordance with ASME Y14.5M, diameters are equivalent

φx

symbology.

Symbol

BLT

Dimensions

Inches

Millimeters

Min

Max

Min

Max

.215

.235

5.46

5.97

.293

.357

7.44

9.07

.570

14.48

.045

.100

1.14

2.54

.025

.035

0.64

0.89

1.000 1.625 25.40 41.28

.188

4.78

Notes

FIGURE 1.

Physical dimensions (DO-13).

T4-LDS-0094 Rev. 2 (101572)

Page 5 of 5

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1N5555E3TR Related Products

	1N5555E3TR	1N5556E3TR	1N5555E3	1N5558E3TR
Description	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN	Trans Voltage Suppressor Diode, 1500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN	Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN	Trans Voltage Suppressor Diode, 1500W, 175V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN
Maker	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	O-MALF-W2	O-MALF-W2	O-MALF-W2	O-MALF-W2
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	33 V	43.7 V	33 V	191 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-202AA	DO-202AA	DO-202AA	DO-202AA
JESD-30 code	O-MALF-W2	O-MALF-W2	O-MALF-W2	O-MALF-W2
Maximum non-repetitive peak reverse power dissipation	1500 W	1500 W	1500 W	1500 W
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	1 W	1 W	1 W	1 W
Maximum repetitive peak reverse voltage	30.5 V	40.3 V	30.5 V	175 V
surface mount	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL

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