DIGITRON SEMICONDUCTORS
C180A-C180PC
150A PHASE CONTROL SCR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Characteristics
RMS on-state current
Average on-state current
Peak one-cycle surge (non-repetitive) on-state current (60Hz)
Peak one-cycle surge (non-repetitive) on-state current (50Hz)
Critical rate of rise of on-state current (non-repetitive)
Critical rate of rise of on-state current (repetitive)
I
2
t (for fusing), 8.3 ms
Peak gate power dissipation
Average gate power dissipation
Storage temperature
Operating temperature
Mounting torque
Mounting torque
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
TSM
di/dt
di/dt
I
2
t
P
GM
P
G(AV)
T
stg
T
J
C180
235
150
3500
3200
800
150
50,800
10
2
-40 to +150
-40 to +125
250 to 300
28 to 34
Units
A
A
A
A
A/µs
A/µs
A
2
s
W
W
°C
°C
In.-lb.
N-m
VOLTAGE RATINGS
Characteristics
Working peak
reverse voltage
C180A
100
C180B
200
C180C
300
C180D
400
C180E
500
C180N
600
C180S
700
C180M
800
C180T
900
C180P
1000
C180PA
1100
C180PB
1200
C180PC
1300
ELECTRICAL AND THERMAL CHARACTERISTICS
Characteristics
Voltage – Blocking State Maximums
Forward leakage, peak
Reverse leakage, peak
Current – Conducting State Maximums
Peak on-state voltage
Switching
Typical turn-off time
Typical delay time
Minimum critical dv/dt exponential to V
DRM
Thermal
Maximum thermal resistance, junction to case
Case to sink, lubricated
Gate – Maximum Parameters
Gate current to trigger
Gate voltage to trigger
Non-triggering gate voltage
Peak forward gate current
Peak reverse gate voltage
Symbol
I
DRM
I
RRM
V
TM
t
q
t
d
dv/dt
R
θJC
R
θCS
I
GT
V
GT
V
GDM
I
GTM
V
GRM
T
C
= 25°C, V
D
= 6Vdc, R
L
= 3Ω
T
C
= -40 to +125°C, V
D
= 6Vdc, R
L
= 3Ω
T
J
= 125°C, Rated V
DRM
, R
L
= 1000Ω
Test Conditiions
T
J
= 125°C, V
DRM
= Rated
T
J
= 125°C, V
RRM
= Rated
T
J
= 25°C, I
TM
= 1500A
I
T
= 150A, T
J
= 125°C, di
R
/dt = 12.5A/µsec, reapplied
dv/dt = 20V/µsec, linear to 0.8V
DRM
, V
R
= 50V
I
T
= 100A, V
DRM
= Rated, gate supply = 10V open ckt,
25Ω, 0.1 µsec rise time
T
J
= 125°C, gate open
C180
20
20
2.85
100
1.0
200
.14
0.075
150
3.0
0.15
10
5
Units
mA
mA
V
µsec
µsec
V/µsec
°C/W
°C/W
mA
V
V
A
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
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