DIGITRON SEMICONDUCTORS
C230, C231 SERIES
C230()3, C231()3 SERIES
C232, C233 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off state voltage
(1)
(T
J
= -40 to +100°C)
C230F, C231F, C230F3, C231F3, C232F, C233F
C230A, C231A, C230A3, C231A3, C232A, C233A
C230B, C231B, C230B3, C231B3, C232B, C233B
C230C, C231C, C230C3, C231C3, C232C, C233C
C230D, C231D, C230D3, C231D3, C232D, C233D
C230E, C231E, C230E3, C231E3, C232E, C233E
C230M, C231M, C230M3, C231M3, C232M, C233M
Peak non-repetitive reverse voltage
(T
J
= -40 to +100°C)
C230F, C231F, C230F3, C231F3, C232F, C233F
C230A, C231A, C230A3, C231A3, C232A, C233A
C230B, C231B, C230B3, C231B3, C232B, C233B
C230C, C231C, C230C3, C231C3, C232C, C233C
C230D, C231D, C230D3, C231D3, C232D, C233D
C230E, C231E, C230E3, C231E3, C232E, C233E
C230M, C231M, C230M3, C231M3, C232M, C233M
Forward current RMS
Peak surge current
(one cycle, 60Hz, T
C
= -40 to +100°C)
Circuit fusing considerations
(T
C
= -40 to +100°C, t = 8.3ms)
Peak gate power
Average gate power
Peak forward gate current
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
Value
Unit
V
RRM
, V
DRM
50
100
200
300
400
500
600
Volts
V
RSM
75
150
300
400
500
600
720
25
250
260
5
0.5
2
-40 to +100
-40 to +125
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
In. lb.
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a
positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Pressfit
Isolated stud
Symbol
R
ӨJC
Maximum
1
1.15
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(Rated V
DRM
or V
RRM
, gate open)
T
C
= 25°C
T
C
= 100°C
Forward “on” voltage
(I
TM
= 100A peak, pulse width
≤
1ms, duty cycle
≤
2%)
144 Market Street
Kenilworth NJ 07033 USA
Symbol
Min.
Typ.
Max.
Unit
I
DRM
, I
RRM
-
-
-
-
-
-
10
1
1.9
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
µA
mA
Volts
V
TM
phone +1.908.245-7200
fax +1.908.245-0555
DIGITRON SEMICONDUCTORS
C230, C231 SERIES
C230()3, C231()3 SERIES
C232, C233 SERIES
Characteristic
Gate trigger current
(C230, C230()3, C232 series)
(V
D
= 12V, R
L
= 120Ω)
(V
D
= 12V, R
L
= 60Ω, T
C
= -40°C)
Gate trigger current
(C231, C231()3, C233 series)
(V
D
= 12V, R
L
= 120Ω)
(V
D
= 12V, R
L
= 60Ω, T
C
= -40°C)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 120Ω)
(V
D
= 12V, R
L
= 60Ω, T
C
= -40°C)
(V
D
= Rated V
DRM
, R
L
= 1000Ω, T
C
= 100°C)
Holding current
(V
D
= 24V, gate open, I
T
= 0.5A)
T
C
= 25°C
T
C
= -40°C
Turn-on time
(t
d
+t
r
)
(I
TM
= 25A, I
GT
= 40mA, V
D
= Rated V
DRM
)
Turn-off time
(I
TM
= 10A, I
R
= 10A, pulse width = 50µs, dv/dt = 20V/µs,
V
D
= Rated V
DRM
)
(T
C
= 100°C)
Forward voltage application rate
(V
D
= rated V
DRM,
T
C
= 100°C)
SILICON CONTROLLED RECTIFIER
Symbol
I
GT
Min.
-
-
-
-
-
-
0.2
Typ.
-
-
-
-
-
-
-
Max.
25
40
9
20
1.5
2
-
Unit
mA
I
GT
mA
V
GT
Volts
I
H
-
-
-
-
-
1
50
100
-
mA
t
gt
µs
t
q
-
-
-
25
35
100
-
-
-
µs
dv/dt
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Digi PF2 (C232 and C233 SERIES)
Body painted, alpha-numeric
DIGI PF2
Inches
Min
Max
0.501
0.505
0.465
0.475
0.330
0.380
0.100
-
0.035
0.085
0.080
0.097
-
0.800
-
0.510
0.065
0.160
Millimeters
Min
Max
12.730
12.830
11.810
12.060
8.390
9.650
2.540
-
0.890
2.160
2.040
2.460
-
20.320
-
12.950
1.650
4.060
A
B
C
E
F
J
K
N
Q
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
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