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30KP64CE3

Description
Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size2MB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

30KP64CE3 Overview

Trans Voltage Suppressor Diode, 30000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

30KP64CE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage86.9 V
Minimum breakdown voltage71.1 V
Breakdown voltage nominal value79 V
Shell connectionISOLATED
Maximum clamping voltage115 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage64 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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