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BCW61BLEADFREE

Description
Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size324KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BCW61BLEADFREE Overview

Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW61BLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
Other featuresLOW NOISE
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz

BCW61BLEADFREE Preview

BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR BCW61B Series
types are PNP Silicon Transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for low level, low noise
applications.
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICES
ICES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
Cob
NF
ton
ton
SYMBOL
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
32
32
5.0
100
350
-65 to +150
357
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCE=32V
VCE=32V, TA=150°C
IC=2.0mA
32
IE=1.0μA
5.0
IC=10mA, IB=250μA
IC=50mA, IB=1.25mA
IC=10mA, IB=250μA
0.60
IC=50mA, IB=1.25mA
0.68
VCE=5.0V, IC=2.0mA
0.60
VCB=10V, IC=0, f=1.0MHz
VCE=5.0V, IC=0.2mA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz
VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA
VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA
BCW61B
MIN
MAX
30
140
310
80
175
350
MAX
20
20
0.25
0.55
0.85
1.05
0.75
6.0
6.0
150
800
BCW61C
MIN MAX
40
250
460
100
250
500
UNITS
nA
μA
V
V
V
V
V
V
V
pF
dB
ns
ns
BCW61D
MIN MAX
100
380
630
100
350
700
hFE
hFE
hFE
hfe
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=5.0V,
IC=10μA
IC=2.0mA
IC=50mA
IC=2.0mA, f=1.0kHz
R2 (20-November 2009)
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
BCW61B :
BCW61C :
BCW61D :
BB
BC
BD
R2 (20-November 2009)
w w w. c e n t r a l s e m i . c o m

BCW61BLEADFREE Related Products

BCW61BLEADFREE BCW61DLEADFREE BCW61CLEADFREE
Description Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Central Semiconductor Central Semiconductor Central Semiconductor
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
Other features LOW NOISE LOW NOISE LOW NOISE
Collector-emitter maximum voltage 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 380 250
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz 180 MHz
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