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STTH30AC06FP

Description
Turbo 2 ultrafast high voltage rectifier
CategoryDiscrete semiconductor    diode   
File Size372KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STTH30AC06FP Overview

Turbo 2 ultrafast high voltage rectifier

STTH30AC06FP Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
package instructionR-PSFM-T2
Manufacturer packaging codeTO-220FPAC
Reach Compliance Codecompliant
Factory Lead Time15 weeks
applicationHIGH VOLTAGE ULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.95 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current270 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current20 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

STTH30AC06FP Preview

STTH30AC06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
A
K
Description
This device, which uses ST Turbo 2 600 V
technology, is ideal for switching power supplies
and industrial applications as a rectification and
discontinuous mode PFC boost diode.
Table 1: Device summary
Symbol
Value
30 A
600 V
175 °C
1.15 V
45 ns
A
TO220FPAC
A
K
A
K
I
F(AV)
V
RRM
T
j
V
F
(typ.)
t
rr
(max.)
A K
TO3P-3L
A
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduced switching and conduction losses
Insulated package: TO-220FPAC
Insulated voltage: 2000 V
RMS
sine
February 2018
DocID027889 Rev 2
1/10
www.st.com
This is information on a product in full production.
Characteristics
STTH30AC06FP
1
Characteristics
Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Storage temperature range
Operating junction temperature
Table 3: Thermal parameters
Symbol
R
th(j-c)
Junction to case
Parameter
TO-220FPAC
TO3P-3L
Max. value
3.5
°C/W
0.7
Unit
t
p
= 10 ms sinusoidal
Value
600
50
30
270
-65 to +175
175
Unit
V
A
A
A
°C
°C
Table 4: Static electrical characteristics
Symbol
I
R
(1)
V
F
(2)
Notes:
(1)
(2)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
-
-
-
-
Typ.
Max.
20
Unit
µA
80
800
1.95
Forward voltage drop
I
F
= 30 A
1.15
1.45
V
Pulse test: t
p
= 5 ms, δ < 2%
Pulse test: t
p
= 380 μs, δ < 2 %
To evaluate the conduction losses, use the following equation:
P = 1.1 x I
F(AV)
+ 0.012 x I
F2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameters
Test conditions
I
F
= 0.5 A,
I
rr
= 0.25 A,
I
R
= 1 A
I
F
= 1 A,
dI
F
/dt = 50 A/μs,
V
R
= 30 V
I
F
= 30 A,
dI
F
/dt = 100 A/μs,
V
R
= 400 V
Min.
-
Typ.
Max.
35
ns
-
45
60
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
RM
Reverse recovery
current
T
j
= 125 °C
-
6
8
A
2/10
DocID027889 Rev 2
STTH30AC06FP
Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
60
50
δ = 0.05
Figure 2: Forward voltage drop versus forward
current (typical values)
1000.0
I
F
(A)
P
F
(AV)
(W)
δ = 0.2
δ = 0.5
δ=1
δ = 0.1
40
100.0
T = 150 °C
j
30
T = 25 °C
j
10.0
20
10
I
F(AV)
T
1.0
(A)
δ= tp/T
tp
0
0
4
8
12
16
20
24
28
32
36
40
V (V)
F
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Figure 3: Forward voltage drop versus forward
current (maximum values)
1000.0
I
F
(A)
Figure 4: Relative variation of thermal impedance,
junction to case, versus pulse duration
(TO-220FPAC)
Z
1.0
0.9
0.8
/R
th(j-c) th(j-c)
100.0
T = 150 °C
j
0.7
T = 25 °C
j
0.6
0.5
0.4
10.0
1.0
V (V)
F
0.3
0.2
0.1
Single pulse
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0.0
1.E-03
t (s)
P
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Figure 5: Relative variation of thermal impedance,
junction to case, versus pulse duration (TO3P-3L)
1.0
0.9
Figure 6: Peak reverse recovery current versus
dI
F
/dt (typical values)
20
16
12
8
4
Z
/R
th(j-c) th(j-c)
I
RM (A)
I
F
= 30 A
V
R
= 400 V
T = 125 °C
j
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04
t (s)
P
dl
F
/dt (A/µs)
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
100
150
200
250
300
350
400
450
500
DocID027889 Rev 2
3/10
Characteristics
Figure 7: Reverse recovery time versus dI
F
/dt
(typical values)
400
350
300
250
200
STTH30AC06FP
Figure 8: Reverse recovery charges versus dI
F
/dt
(typical values)
1400
I
F
= 30 A
V
R
= 400 V
T = 125 °C
j
t
RR (ns)
Q
RR (nC)
I
F
= 30 A
V
R
= 400 V
T = 125 °C
j
1200
1000
800
600
400
200
dl
F
/dt (A/µs)
150
100
50
0
0
50
100
150
200
250
300
350
400
450
500
0
0
50
100
150
200
250
300
350
dl
F
/dt (A/µs)
400
450 500
Figure 9: Reverse recovery softness factor versus
dI
F
/dt (typical values)
3.0
2.5
2.0
1.5
Figure 10: Relative variations of dynamic
parameters versus junction temperature
2.0
1.6
S
FACTOR
1.2
I
F
= 30 A
V
R
= 400 V
Reference: T = 125 °C
j
S
FACTOR
I
F
= 30 A
V
R
= 400 V
T = 125 °C
j
0.8
1.0
0.5
0.0
dl
F
/dt (A/µs)
I
RM
0.4
0.0
25
Q
RR
T
j
(°C)
0
50
100
150
200
250
300
350
400
450
500
50
75
100
125
Figure 11: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
1000
F = 1 MHz
V
OSC
= 30 mV
RMS
T = 25 °C
j
100
V
R
(V)
10
1
10
100
1000
4/10
DocID027889 Rev 2
STTH30AC06FP
Package
information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
Recommended torque value: 0.55 N·m (for TO-220FPAC)
Recommended torque: (TO3P-3L) 0.4 to 0.6 N·m
Maximum torque value: 0.7 N·m (for TO-220FPAC)
2.1
TO3P-3L package information
Figure 12: TO3P-3L package outline
Seating plane
A
ØP
A1
E
E1
E2
Q
Q1
D
ØP1
L2
D1
A2
L1
b2
L
b1(2x)
c
b(
3x
)
e
(2x)
DocID027889 Rev 2
5/10
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