DIGITRON SEMICONDUCTORS
MAC15(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +125°C)
MAC15-4, MAC15A-4
MAC15-6, MAC15A-6
MAC15-8, MAC15A-8
MAC15-10, MAC15A-10
Peak gate voltage
RMS on-state current
(full sine wave, 50 to 60Hz, T
C
= 90°C)
Circuit fusing considerations
(t = 8.3ms)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
C
= 80°C, preceded and followed by rated current)
Peak gate power
(T
C
= 80°C, pulse width = 2µs)
Average gate power
(T
C
= 80°C, t = 8.3ms)
Peak gate current
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
200
400
600
800
10
15
93
150
20
0.5
2.0
-40 to +125
-40 to +150
Volts
V
GM
I
T(RMS)
It
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
2
Volts
Amps
A
2
s
Amps
Watts
Watts
Amps
°C
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristic
Peak blocking current
(Rated V
DRM
@ T
J
= 25°C)
(Rated V
DRM
@ T
J
= 125°C)
Peak on-state voltage
(I
TM
= 21A peak, pulse width = 1 to 2 ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+) “A” suffix only
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
Min
-
-
-
Typ.
-
-
1.3
Max
10
2
1.6
Unit
µA
mA
Volts
V
TM
I
GT
-
-
-
-
-
-
-
-
50
50
50
75
mA
V
GT
-
-
-
-
0.2
0.2
0.9
0.9
1.1
1.4
-
-
2
2
2
2.5
-
-
Volts
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
DIGITRON SEMICONDUCTORS
MAC15(A) SERIES
Characteristic
Holding current
(either direction)
(V
D
= 12V, gate open, I
T
= 200mA)
Turn on time
(V
D
= rated V
DRM
, I
TM
= 17A, I
GT
= 120mA, rise time = 0.1µs, pulse width = 2µs)
Critical rate of rise of commutation voltage
(V
D
= Rated V
DRM
, I
TM
= 21A, commutating di/dt = 7.6A/ms, gate unenergized,
T
C
= 80°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
I
H
t
gt
Min
-
-
-
Typ.
6
1.5
5
Max
40
-
-
Unit
mA
µs
dv/dt(c)
V/µs
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
京公网安备 11010802033920号
EEWORLD
