DIGITRON SEMICONDUCTORS
MAC997 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +110°C, sine wave 50 to 60Hz, gate open)
MAC997A6, MAC997B6
MAC997A8, MAC997B8
RMS on-state current
(Full cycle sine wave 50 to 60Hz, T
C
= 50°C)
Peak non-repetitive surge current
(1 cycle, sine wave, 60 Hz, T
C
= 110°C)
Circuit fusing considerations
(t = 8.3ms)
Peak gate voltage
(t
≤
2.0µs, T
C
= 80°C)
Peak gate power
(t
≤
2.0µs, T
C
= 80°C)
Average gate power
(t
≤
8.3ms, T
C
= 80°C)
Peak gate current
(t
≤
2.0µs, T
C
= 80°C)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
400
600
0.8
8.0
0.26
5.0
5.0
0.1
1.0
-40 to +110
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
V
GM
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Volts
Watts
Watts
Amps
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(V
D
= Rated V
DRM,
V
RRM
, gate open @ T
J
= 25°C)
(V
D
= Rated V
DRM,
V
RRM
, gate open @ T
J
= 110°C)
Peak on-state voltage
(I
TM
= ±0.85A peak, pulse width
≤
2.0ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MAC997A6, MAC997A8
MT2(+),G(+)
(MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
MAC997B6, MAC997B8
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
Latching current
(V
D
= 12V, I
G
= 10mA)
All types
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
,
I
RRM
V
TM
Min
-
-
-
Typ.
-
-
-
Max
10
100
1.9
Unit
µA
Volts
I
GT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
5.0
5.0
7.0
3.0
3.0
3.0
5.0
mA
I
L
-
-
-
-
1.6
10.5
1.5
2.5
15
20
15
15
mA
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
DIGITRON SEMICONDUCTORS
MAC997 SERIES
Characteristic
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
All types
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
Gate non-trigger voltage
(V
D
= 12V, R
L
= 100Ω, T
J
= 110°C)
All four quadrants
Holding current
(V
D
= 12V, initiating current = 200mA, gate open)
Turn-on time
(V
D
= Rated V
DRM
, I
TM
= 1.0A pk, I
G
= 25mA)
Rate of change of commutating current
(V
D
= 400V, I
TM
= 0.84A, commutating dv/dt = 1.5V/µs, gate open, T
J
= 110°C,
f = 250Hz, with snubber)
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential waveform, gate open, T
J
= 110°C)
Repetitive critical rate of rise of on-state current
(pulse width = 20µs, I
PKmax
= 15A, di
G
/dt = 1A/µs, f = 60Hz)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
Min
Typ.
Max
Unit
V
GT
-
-
-
-
0.66
0.77
0.84
0.88
2.0
2.0
2.0
2.5
Volts
V
GD
0.1
I
H
t
gt
-
-
-
1.5
2.0
-
10
-
Volts
mA
µs
di/dt(c)
1.6
-
-
A/ms
dv/dt
di/dt
20
-
60
-
-
10
V/µs
A/µs
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-92
Alpha-numeric
See below
TO-92
Inches
Min
Max
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
-
0.250
-
0.080
0.105
-
0.100
0.115
-
0.135
-
Millimeters
Min
Max
4.450
5.200
4.320
5.330
3.180
4.190
0.410
0.550
0.410
0.480
1.150
1.390
2.420
2.660
0.390
0.500
12.700
-
6.350
-
2.040
2.660
-
2.540
2.930
-
3.430
-
A
B
C
D
F
G
H
J
K
L
N
P
R
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
Test/Measurement
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