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MBR3020CT

Description
30 A, 20 V, SILICON, RECTIFIER DIODE, TO-3
CategoryDiscrete semiconductor    diode   
File Size277KB,3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
Download Datasheet Parametric Compare View All

MBR3020CT Overview

30 A, 20 V, SILICON, RECTIFIER DIODE, TO-3

MBR3020CT Parametric

Parameter NameAttribute value
MakerDigitron
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.76 V
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Maximum non-repetitive peak forward current400 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage20 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationBOTTOM
DIGITRON SEMICONDUCTORS
MBR3020CT-MBR3045CT
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
(Rated V
R
)
Peak repetitive forward current
(Rated V
R
, square wave, 20 kHz)
Peak repetitive reverse surge current
(2.0µs, 1.0 kHz)
Non-repetitive peak surge current
(surge applied at rated load conditions, halfwave, single phase, 60Hz)
Operating junction temperature range
Storage junction temperature range
Peak surge junction temperature
(forward current applied)
Voltage rate of change
(Rated V
R
)
Maximum thermal resistance
Junction to case
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
RRM
I
FSM
T
J
T
stg
T
J(pk)
dv/dt
R
ӨJC
MBR
3020CT
20
3035CT
35
30 @ T
C
= 105°C
30
2
400
-65 to +150
-65 to +175
175
1000
1.4
3045CT
45
Unit
30A SCHOTTKY RECTIFIER
V
A
A
A
A
°C
°C
°C
V/µs
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
(I
F
= 20A, T
C
= 125°C)
(I
F
= 30A, T
C
= 125°C)
(I
F
= 30A, T
C
= 25°C)
Maximum instantaneous reverse current
(Rated dc voltage, T
C
= 125°C)
(Rated dc voltage, T
C
= 25°C)
Capacitance
Note 1: Pulse test: Pulse width = 300µs, duty cycle
2.0%.
(1)
Symbol
MBR
3020CT
3035CT
0.6
0.72
0.76
60
1.0
2000
3045CT
Unit
V
F
V
(1)
I
R
C
t
mA
pF
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-3 Dual
Alpha-numeric
See below
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121205

MBR3020CT Related Products

MBR3020CT MBR3045CT
Description 30 A, 20 V, SILICON, RECTIFIER DIODE, TO-3 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Maker Digitron Digitron
Reach Compliance Code unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.76 V 0.76 V
JEDEC-95 code TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2
Maximum non-repetitive peak forward current 400 A 400 A
Number of components 2 2
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 15 A 15 A
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 20 V 45 V
Maximum reverse current 1000 µA 1000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
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