SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• For general purpose applications
• The SD101 series is a Metal-on-silicon
e3
Schottky barrier device which is protected
by a PN junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications
• These diodes are also available in the Mini-MELF
case with type designations LL101A thru LL101C,
in the DO35 case with type designations SD101A
through SD101C and in the SOD323 case with
type
designations
SD101AWS
through
SD101CWS.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD323 Plastic case
Weight:
approx. 5.0 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
SD101AWS
SD101BWS
SD101CWS
Ordering code
SD101AWS-GS18 or SD101AWS-GS08
SD101BWS-GS18 or SD101BWS-GS08
SD101CWS-GS18 or SD101CWS-GS08
Type Marking
SA
SB
SC
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak inverse voltage
Test condition
Part
SD101AWS
SD101BWS
SD101CWS
Power dissipation
(Infinite Heat Sink)
Forward current
Maximum single cycle surge
1)
Symbol
V
RRM
V
RRM
V
RRM
P
tot
I
F
Value
60
50
40
150
1)
30
2
Unit
V
V
V
mW
mA
A
10 µs square wave
I
FSM
Valid provided that electrodes are kept at ambient temperature
Document Number 85680
Rev. 1.5, 17-May-06
www.vishay.com
1
SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
650
1)
125
1)
- 65 to + 150
Unit
K/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Test condition
I
R
= 10 µA
Part
SD101AWS
SD101BWS
SD101CWS
Leakage current
V
R
= 50 V
V
R
= 40 V
V
R
= 30 V
Forward voltage drop
I
F
= 1 mA
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
I
F
= 15 mA
SD101AWS
SD101BWS
SD101CWS
Junction capacitance
V
R
= 0 V, f = 1 MHz
SD101AWS
SD101BWS
SD101CWS
Reverse recovery time
I
F
= I
R
= 5 mA,
recover to 0.1 I
R
Symbol
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
tot
C
tot
C
tot
t
rr
Min
60
50
40
200
200
200
0.41
0.40
0.39
1
0.95
0.90
2.0
2.1
2.2
1
Typ.
Max
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
V
ns
ns
ns
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
100
I
R
- Reverse Current (µA)
150 °C
125 °C
10
10
100 °C
1
75 °C
50 °C
0.1
25 °C
0.01
0
10
20
30
40
50
I
F
- Forward Current (mA)
A
B
C
1
0.1
0.01
18477
0
0.2
0.4
0.6
0.8
1.0
18479
V
R
- Reverse
Voltage
(V)
V
F
- Forward
Voltage
(V)
Figure 1. Typical Variation of Reverse Current at Various
Temperatures
Figure 2. Typical Variation of Forward Current vs. Forward Voltage
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2
Document Number 85680
Rev. 1.5, 17-May-06
SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
2.0
C
T
- Typical Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
18480
100
T
j
= 25 °C
I
F
- Forward Current (mA)
80
60
40
A
B
C
A
B
C
20
0
0
10
20
30
40
50
18478
0
0.2
0.4
0.6
0.8
1.0
V
R
- Reverse
Voltage
(V)
V
F
- Forward
Voltage
(V)
Figure 3. Typical Capacitance Curve as a Function of Reverse
Voltage
Figure 4. Typical Forward Conduction Curve
Package Dimensions in mm (Inches): SOD323
1.15 (0.045)
0.8 (0.031)
0.1 (0.004) max
foot print recommendation:
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
cathode
bar
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
0.6 (0.024)
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
Document Number 85680
Rev. 1.5, 17-May-06
1.5 (0.059)
1.1 (0.043)
1.6 (0.063)
0.6 (0.024)
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3
SD101AWS / 101BWS / 101CWS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85680
Rev. 1.5, 17-May-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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