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MBR3045WT

Description
15 A, SILICON, RECTIFIER DIODE, TO-247AD
CategoryDiscrete semiconductor    diode   
File Size186KB,2 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MBR3045WT Overview

15 A, SILICON, RECTIFIER DIODE, TO-247AD

MBR3045WT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.76 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage45 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
DIGITRON SEMICONDUCTORS
MBR3035WT-MBR3045WT
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
(Rated V
R
)
Peak repetitive forward current
(Rated V
R
, square wave, 20 kHz)
Peak repetitive reverse surge current
(2.0µs, 1.0 kHz)
Non-repetitive peak surge current
(surge applied at rated load conditions, halfwave, single phase, 60Hz)
Operating junction temperature range
Storage junction temperature range
Peak surge junction temperature
(forward current applied)
Voltage rate of change
(Rated V
R
)
Maximum thermal resistance
Junction to case
Junction to ambient
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
RRM
I
FSM
T
J
T
stg
T
J(pk)
dv/dt
R
ӨJC
R
ӨJA
MBR
3035WT
35
30 @ T
C
= 105°C
30
2
200
-65 to +150
-65 to +175
175
10
1.4
40
3045WT
45
Unit
30A SCHOTTKY RECTIFIER
V
A
A
A
A
°C
°C
°C
V/ns
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
(I
F
= 20A, T
C
= 125°C)
(I
F
= 30A, T
C
= 125°C)
(I
F
= 30A, T
C
= 25°C)
Maximum instantaneous reverse current
(Rated dc voltage, T
C
= 125°C)
(Rated dc voltage, T
C
= 25°C)
Note 1: Pulse test: Pulse width = 300µs, duty cycle
2.0%.
(1)
Symbol
MBR
3035WT
0.6
0.72
0.76
100
1.0
3045WT
Unit
V
F
V
(1)
I
R
mA
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-247
Alpha-numeric
See below
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121130

MBR3045WT Related Products

MBR3045WT MBR3035WT
Description 15 A, SILICON, RECTIFIER DIODE, TO-247AD 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AC
Is it Rohs certified? incompatible incompatible
Maker Digitron Digitron
Reach Compliance Code unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.76 V 0.76 V
JEDEC-95 code TO-247 TO-247
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 200 A 200 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 15 A 15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 45 V 35 V
Maximum reverse current 1000 µA 1000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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